The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

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概要

• 論文の詳細を見る

• A complete study on the effects of indium channel implant energy on transistor characteristics including carrier mobility, drain current, drain induce barrier lowering (DIBL), device breakdown, junction leakage, impact ionization rate and hot-carrier degradation were performed on 0.1 $\mu$m devices. It was found that devices with super-steep-retrograde (SSR) indium channel profile depict higher transconductance in linear region, albeit the saturation drive current is lower, compared to the conventional BF2-doped control. In addition, In-doped devices also depict improved DIBL, $I_{\text{on}}$–$I_{\text{off}}$ current ratio and transistor breakdown voltage. Finally, by increasing the indium implant energy, devices depict an improved transconductance, reduced DIBL and hot-carrier degradation, while suffering larger junction leakage and capacitance.

• 2001-01-15

著者

• CHAO Tien-Sheng

  National Nano Device Laboratories

• Lee Yao-jen

  Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Chou Jih-wen

  United Microelectronics Corporation Device Engineering Department Specially Technology Division

• Luo Wen-zheng

  Institute Of Electronics National Chiao Tung University

• Chen Coming

  Institute Of Electronics National Chiao Tung University

• Yeh Wen-kuan

  United Microelectronics Corp. Specialty Technology Department Technogoly & Process Development D

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Lin Tony

  United Microelectronics Corp. Technology Development Division

• Chang Sun-jay

  Institute Of Electronics National Chiao-tung University

• Luo Wen-Zheng

  Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Chou Jih-Wen

  United Microelectronics Corp.

• Chang Chun-Yen

  Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Huang Tiao-Yuan

  Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Chou Jih-Wen

  United Microelectronics Corp., Technology Development Division, Hsinchu, Taiwan, R.O.C.

• Chao Tien-Sheng

  National Nano Device Labs., Hsinchu, Taiwan, R.O.C.

• Chen Coming

  Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Chang Sun-Jay

  Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Lin Tony

  United Microelectronics Corp., Technology Development Division, Hsinchu, Taiwan, R.O.C.

• Lee Yao-Jen

  Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Yeh Wen-Kuan

  United Microelectronics Corp., Technology Development Division, Hsinchu, Taiwan, R.O.C.

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