A Novel Shallow Trench Isolation with Mint-Spacer Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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Lin T
United Microelectronics Corp. Hsinchu Twn
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Chou J‐w
United Microelectronics Corp. Technology Development Division
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Chou Jih-wen
United Microelectronics Corporation Device Engineering Department Specially Technology Division
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Yeh W‐k
National Univ. Kaohsiung Kaohsiung Twn
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Yeh Wen-kuan
United Microelectronics Corp. Specialty Technology Department Technogoly & Process Development D
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LIN Tony
United Microelectronics Corp., technology Development Division
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Lin Tony
United Microelectronics Corporation (umc) Central R&d Division
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Lin Tony
United Microelectronics Corp. Technology Development Division
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CHEN Coming
United Microelectronics Crop., Technology Development Division, Science-Based Industrial Park
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SUN Shin-Wei
United Microelectronics Crop., Technology Development Division, Science-Based Industrial Park
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Sun Shin-wei
United Microelectronics Corp. Specialty Technology Department Technogoly & Process Development D
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Sun Shin-wei
United Microelectronics Crop. Technology Development Division Science-based Industrial Park
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Chen Coming
United Microelectronics Corp. Technology Development Division
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Chou Jih-wen
United Microelectronics Crop. Technology Development Division Science-based Industrial Park
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Chen Coming
United Microelectronics Crop. Technology Development Division Science-based Industrial Park
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Lin Tony
United Microelectronics Crop. Technology Development Division Science-based Industrial Park
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Yeh Wen-kuan
United Microelectronics Crop. Technology Development Division Science-based Industrial Park
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Chou Jih-Wen
United Microelectronics Corp.
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- Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
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- A Novel Shallow Trench Isolation with Mint-Spacer Technology
- Optimum Treatment for Improvement of Indium-Halo Structure for Sub-0.1μm n-Type Metal-Oxide-Semiconductor Field-Effect Transistor : Semiconductors
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- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
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