A Novel Shallow Trench Isolation with Mini-Spacer Technology
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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SUN S.
United Microelectronics Corp., Specialty Technology Department, Technology & Process Development Div
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LIN Tony
United Microelectronics Corp., technology Development Division
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Lin Tony
United Microelectronics Corp. Technology Development Division
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Chen Coming
United Microelectronics Corp. Technology Development Division
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Yeh W.
United Microelectronics Corp. Specialty Technology Department Technology & Process Development D
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Yeh W.
United Microelectronics Corp. Technology Development Division
関連論文
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- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
- A Novel Shallow Trench Isolation with Mint-Spacer Technology
- High Performance Sub-0.1μm Dynamic Threshold MOSFET Using Indium Channel Implantation
- A Novel Shallow Trench Isolation with Mini-Spacer Technology
- New Observations on the Narrow Width Effect of the Hot Carrier and NBTI Reliabilities in pMOSFETs with Various Types of Strains
- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
- Optimization of Active Geometry Configuration and Shallow Trench Isolation (STI) Stress for Advanced CMOS Devices