New Observations on the Narrow Width Effect of the Hot Carrier and NBTI Reliabilities in pMOSFETs with Various Types of Strains
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Chung S.
Department Of Industrial & Manufacturing Systems Engineering The University Of Hong Kong
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CHIEN S.
United Microelectronics Corp., Specialty Technology Department, Technology & Process Development Div
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SUN S.
United Microelectronics Corp., Specialty Technology Department, Technology & Process Development Div
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Lin Y.
United Microelectronics Corp. Specialty Technology Department Technology & Process Development D
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Tsai C.
United Microelectronics Corporation (umc) Central R&d Division
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HUANG D.
Chang-Gung University
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LAI C.
Chang-Gung University
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LIU P.
United Microelectronics Corporation (UMC), Central R&D Division
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MA G.
United Microelectronics Corporation (UMC), Central R&D Division
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