Investigation and Modeling of Stress Interactions on 90nm SOI CMOS with Various Mobility Enhancement Approaches
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Shiau W.
United Microelectronics Corporation Central R&d Division
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Lin C.
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation
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Yeh W.
Department Of Electrical Engineering National University Of Kaohsiung
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Hsu C.
United Microelectronics Corporation (umc) Central R&d Division
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Chen L.
United Microelectronics Corporation (umc) Central R&d Division
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Tsai C.
United Microelectronics Corporation (umc) Central R&d Division
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Fang Y.
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation
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Fang Y.
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation
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CHANG H.
United Microelectronics Corporation (UMC), Central R&D Division
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LEE M.
United Microelectronics Corporation (UMC), Central R&D Division
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Shiau W.
United Microelectronics Corporation (umc) Central R&d Division
関連論文
- Mobility Modulation Technology Impact on Device Performance and Reliability for sub-90nm SOI CMOSFETs
- The Impact of Body-Potential on Hot-Carrier-Induced Device Degradation for 90nm Partially-Depleted SOI nMOSFETs
- Impact of Zr/Hf Ratio on Reliability of HfZrO_x Gate Dielectric
- Investigation and Modeling of Stress Interactions on 90nm SOI CMOS with Various Mobility Enhancement Approaches
- Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine
- New Observations on the Narrow Width Effect of the Hot Carrier and NBTI Reliabilities in pMOSFETs with Various Types of Strains