Impact of Zr/Hf Ratio on Reliability of HfZrO_x Gate Dielectric
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
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Lee T.
Taiwan Semiconductor Manufacturing Company Hsinchu Science Park
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LIAO J.
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, Nat
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FANG Y.
VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, Nat
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HOU Y.
Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park
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TSENG W.
Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park
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YANG J.
Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park
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HSU P.
Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park
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CHAO Y.
Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park
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LIN K.
Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park
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HUANG K.
Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park
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LIANG M.
Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park
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Lin K.
Taiwan Semiconductor Manufacturing Company Hsinchu Science Park
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Fang Y.
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation
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Liao J.
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation
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Liang M.
Taiwan Semiconductor Manufacturing Co.
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Liang M.
Taiwan Semiconductor Manufacturing Company Hsinchu Science Park
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Yang J.
Taiwan Semiconductor Manufacturing Company Hsinchu Science Park
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Tseng W.
Taiwan Semiconductor Manufacturing Company Hsinchu Science Park
関連論文
- Impact of Zr/Hf Ratio on Reliability of HfZrO_x Gate Dielectric
- Investigation and Modeling of Stress Interactions on 90nm SOI CMOS with Various Mobility Enhancement Approaches
- A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS Devices
- A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement