A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Cheng S.
Department of Physics, University of Nottingham
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CHUNG Steve
Department of Electronic Engineering, National Chiao Tung University
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Chung Steve
Department Of Electronic Engineering National Chiao Tung University
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Chung Steve
Department Of Electrical Engineering National Tsing-hua University
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Liang M.
Taiwan Semiconductor Manufacturing Co.
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Cheng S.
Department Of Electronic Engineering National Chiao Tung University
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