A Novel Technique for Investigating Hot-Electron-Induced Oxide Damages and Device Degradations in Submicron LDD n-MOSFET's
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Chung Steve
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University
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Chung Steve
Department Of Electrical Engineering National Tsing-hua University
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Lee G.-h.
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University
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- Factitious Stroke Presenting for Acute Treatment
- A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS Devices
- A Novel Technique for Investigating Hot-Electron-Induced Oxide Damages and Device Degradations in Submicron LDD n-MOSFET's
- A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement
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