Reliability Test Guideline for a 0.18μm Generation multi-Oxide CMOS Technology for System-on-Chip Applications
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
-
Chung Steve
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University
-
Chung Steve
Department Of Electrical Engineering National Tsing-hua University
-
Chen Shang-jr
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University
-
Lin Jung-chun
Umc Science-based Industrial Park
-
LIN Ching-Chung
Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University
-
CHU Chih-Hsiun
UMC Science-Based Industrial Park
-
Lin Ching-chung
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University
関連論文
- A Unified 3-D Mobility Model for the Simulation of Submicron MOS Devices
- New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDDn-MOSFET's
- New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET's
- Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Direct Observation of Channel-Doping-Dependent Reverse Short Channel Effect Using Decoupled C-V Technuque
- A New Observation of the Width Dependent Hot Carrier Effect in Shallow-Trench-Isolated P-MOSFET's
- New Degradation Mechanisms of Width-Dependent Hot Carrier Effect in Quarter-Micron Shallow-Trench-Isolated p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors
- Quantitative Investigation of Hot Carrier Induced Drain Current Degradation in Submicron Drain-Engineered Metal-Oxide-Semiconductor Field-Effect-Transistors : Semiconductors
- An Improved Low Voltage Programming Scheme Using Forward Bias Assisted Drain Avalanche Induced Hot Electron Injection on P-Channel EEPROMs
- New Mechanisms and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET's
- Performance and Reliability Improvement of Polycrystalline Silicon Thin Film Transistors by Deuterium Plasma Passivation
- Reliability Test Guideline for a 0.18μm Generation multi-Oxide CMOS Technology for System-on-Chip Applications
- Analysis of Structure-Dependent Hot Carrier Effect in Various LDD MOSFET's Using an Efficient Interface State Profiling Method
- Factitious Stroke Presenting for Acute Treatment
- A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS Devices
- A Novel Technique for Investigating Hot-Electron-Induced Oxide Damages and Device Degradations in Submicron LDD n-MOSFET's
- A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement
- Reliability Test Guidelines for a 0.18 μm Generation Multi-Oxide CMOS Technology for System-on-Chip Applications