New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDDn-MOSFET's
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Cheung Steve
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University
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Huang Dehuan
Erato Yamamoto Quantum Fluctuation Project Jst Ntt Musashino R&d Center
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Huang D
Ntt Musashino R&d Center Tokyo Jpn
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Wang C.l.
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University
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Chung Steve
Department Of Electrical Engineering National Tsing-hua University
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YIH C.M.
Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University
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WU C.C.
Mosel-Vitelic, Hsinchu Science-Based Park
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TAN W.
Mosel-Vitelic, Hsinchu Science-Based Park
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WU H.J.
Mosel-Vitelic, Hsinchu Science-Based Park
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PI S.
Mosel-Vitelic, Hsinchu Science-Based Park
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HUANG Daniel
Mosel-Vitelic, Hsinchu Science-Based Park
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Pi S.
Mosel-vitelic Hsinchu Science-based Park
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Wu H.j.
Mosel-vitelic Hsinchu Science-based Park
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Wu C.c.
Department Of Physics University Of California
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Yih C.m.
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University
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Tan W.
Mosel-vitelic Hsinchu Science-based Park
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- New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDDn-MOSFET's
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