Quantitative Investigation of Hot Carrier Induced Drain Current Degradation in Submicron Drain-Engineered Metal-Oxide-Semiconductor Field-Effect-Transistors : Semiconductors
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概要
- 論文の詳細を見る
Parameters, such as the total amount of hot carrier induced interface states and substrate current, are not sufficient to evaluate hot carrier reliability in drain-engineered metal-oxide-semiconductor field-effect-transistors (MOSFETS). In this paper, for the first time, the distributions of hot carrier induced interface states are physically characterized and incorporated into two-dimensional device simulation to quantitatively study the structure-dependent drain current degradation in submicron MOSFETS, which give us insight into the relationship between degradation modes and device structures. The results show that the hot carrier induced series resistance effect in the sidewall spacer region plays an important role in drain-engineered MOSFETS. A different gate oxide thickness dependence of drain current degradation in thin gate oxide lightly-doped drain (LDD) MOSFETS is observed and is explained as the interface states enhanced series resistance effect in the LDD region.
- 社団法人応用物理学会の論文
- 2001-09-15
著者
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YANG Jiuun-Jer
Department of Electronic Engineering, National Chiao Tung University
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CHUNG Steve
Department of Electronic Engineering, National Chiao Tung University
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Chung Steve
Department Of Electrical Engineering National Tsing-hua University
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Yang Jiuun-jer
Department Of Electronic Engineering And Institute Of Semiconductor Technology Chang Gung University
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