New Degradation Mechanisms of Width-Dependent Hot Carrier Effect in Quarter-Micron Shallow-Trench-Isolated p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• In this study, width-dependent hot-carrier degradation in the p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) with shallow-trench-isolation (STI) is presented. Results show an enhanced drain current degradation with reducing the gate width. A new model and mechanism are proposed to explain the width-dependent hot-carrier (HC) degradation for p-MOSFETs. Based on a two-dimensional channel shortening concept, a new model is developed. The mechanical stress enhanced oxide damage at the STI edge, which will induce channel shortening, is the dominant mechanism for the drain current degradation of the devices after hot-carrier stress. This is a crucial issue for present and future complementary metal-oxide semiconductor (CMOS) ultra-large-scale integration (ULSI), and in particular for high-density dynamic random-access memory (DRAM), fabricated using STI technologies.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-01-15

著者

• YANG Wen-Jei

  Department of Mechanical Engineering, The University of Michigan

• Tang Wen-jei

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University

• CHUNG Steve

  Department of Electronic Engineering, National Chiao Tung University

• Chung Steve

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University

• Chung Steve

  Department Of Electrical Engineering National Tsing-hua University

• Yang Jiuun-jer

  Worldwide Semiconductor Manufacturing Co.

• Yang Wen-jei

  Department Of Mechanical Engineering And Applied Mechanics University Of Michigan

• CHEN Shang-Jr

  Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University

• Chen Shang-jr

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University

• Yih Cherng-Ming

  Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University, H

• Yih Cheng-ming

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University

• Chen Shang-jei

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University

関連論文

• Acoustically Forced Oscillations of Gas Bubbles in Liquids
• A Unified 3-D Mobility Model for the Simulation of Submicron MOS Devices
• New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDDn-MOSFET's
• New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET's
• Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Direct Observation of Channel-Doping-Dependent Reverse Short Channel Effect Using Decoupled C-V Technuque
• A New Observation of the Width Dependent Hot Carrier Effect in Shallow-Trench-Isolated P-MOSFET's
• New Degradation Mechanisms of Width-Dependent Hot Carrier Effect in Quarter-Micron Shallow-Trench-Isolated p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors
• Quantitative Investigation of Hot Carrier Induced Drain Current Degradation in Submicron Drain-Engineered Metal-Oxide-Semiconductor Field-Effect-Transistors : Semiconductors
• Heat Transfer Effectiveness of Saturated Drops in the Nonwetting Regime Impinging on a Heated Surface
• Growth of Gas Bubbles in Deformable Solids with Time-Dependent Heat and Mass Sources
• An Improved Low Voltage Programming Scheme Using Forward Bias Assisted Drain Avalanche Induced Hot Electron Injection on P-Channel EEPROMs
• FLOW CHARACTERISTICS INSIDE DIAMOND-SHAPED CYLINDER BUNDLES(Flow around Cylinder 2)
• New Mechanisms and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET's
• Mass Diffusion from Gas Bubbles Moving in Liquids with Chemical Reaction
• Performance and Reliability Improvement of Polycrystalline Silicon Thin Film Transistors by Deuterium Plasma Passivation
• Reliability Test Guideline for a 0.18μm Generation multi-Oxide CMOS Technology for System-on-Chip Applications
• Analysis of Structure-Dependent Hot Carrier Effect in Various LDD MOSFET's Using an Efficient Interface State Profiling Method
• 燃焼壁表面温度のreal-time測定法
• Factitious Stroke Presenting for Acute Treatment
• A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS Devices
• Personal Viewpoint of Heat Transfer : Past, Present and Future
• A Novel Technique for Investigating Hot-Electron-Induced Oxide Damages and Device Degradations in Submicron LDD n-MOSFET's
• A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement
• Reliability Test Guidelines for a 0.18 μm Generation Multi-Oxide CMOS Technology for System-on-Chip Applications

もっと見る 閉じる

スポンサーリンク