Optimum Treatment for Improvement of Indium-Halo Structure for Sub-0.1μm n-Type Metal-Oxide-Semiconductor Field-Effect Transistor : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-11-01

著者

• Chou Jih-wen

  United Microelectronics Corporation Device Engineering Department Specially Technology Division

• Yeh Wen-kuan

  >electrical Engineering Department National University Of Kaohsiung

• Yeh Wen-Kuan

  >Electrical Engineering Department, National University of Kaohsiung

• Chou Jih-Wen

  United Microelectronics Corp.

• Chou Jih-Wen

  United Microelectronics Corporation, Device Engineering Department, Specially Technology Division

関連論文

• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
• Shallow-Trench Isolation With Raised-Field-Oxide Structure
• A Novel Shallow Trench Isolation with Mint-Spacer Technology
• Optimum Treatment for Improvement of Indium-Halo Structure for Sub-0.1μm n-Type Metal-Oxide-Semiconductor Field-Effect Transistor : Semiconductors
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

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