HUANG Heng-Sheng | Institute of Mechatronics Engineering, National Taipei Universityof Technology

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著作論文

A Capacitance Ratio Method Used for L_ Extraction of an Advanced Metal-Oxide-Semiconductor Device with Halo Implant
A Modified Capacitance-Voltage Method Used for L_ Extraction and Process Monitoring in Advanced 0.15μm Complementary Metal-Oxide-Semiconductor Technology and Beyond
The C-R Method Used for Leff Extraction and Process Optimization in Nano N/P-MOSFET's Devices
The C-R Method Used for Leff Extraction and Process Optimization in Nano N/P-MOSFET's Devices
New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
Behavior of Nano-N-Channel Metal-Oxide-Semiconductor Off-State Leakage Currents
Charge Loss Due to AC Program Disturbance Stresses in EPROMs
Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device

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