PAN Jen-Wei | Department of Electrical Engineering, National Central University
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概要
関連著者
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PAN Jen-Wei
Department of Electrical Engineering, National Central University
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Pan Jen-wei
Department Of Electrical Engineering National Central University
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Chan Yi-jen
Department Of Electrical Engineering National Central University
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LIN Ray-Ming
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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Hong Jyh-wong
Department Of Electrical Engineering National Central University
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Hong J‐w
National Central Univ. Chung‐li Twn
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Lin Ray-ming
Department Of Electrical Engineering National Central University
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Chang Chun-yen
Institute Of Electronics National Chiao Tung University
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CHYI Jen-Inn
Department of Electrical Engineering, National Central University
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TSAY Wen-Chin
Department of Electrical Engineering, National Central University
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JEN Tean-Sen
Department of Electrical Engineering, National Central University
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Tsay Wen-chin
Department Of Electrical Engineering National Central University
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Jen Tean-sen
Department Of Electrical Engineering National Central University
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Shieh Jia-lin
Department Of Electrical Engineering National Central University
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Jen T‐s
Department Of Electrical Engineering National Central University
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Chyi Jen-inn
Department Of Electrical Engineering National Central University
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Chang Chun-yen
Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories
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SHIN Nerng-Fu
Department of Electrical Engineering, National Central University
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HUNG Jyh-Wong
Department of Electrical Engineering, National Central University
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Shin Nerng-fu
Department Of Electrical Engineering National Central University
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WU Chia-Song
Department of Electrical Engineering, National Central University
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LIN Chun-Hong
Materials Research Laboratories, Industrial Technology Research Institute
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Lin Chun-hong
Materials Research Laboratories Industrial Technology Research Institute
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Wu C‐s
Compaq Computer Corp. Texas Usa
著作論文
- Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface
- Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers