Ultrathin Nitride/Oxide Stack Gate Dielectric (14.9A to 20.3A) for Sub-0.13μm CMOS and Beyond
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Pey K.
Department Of Electrical And Computer Engineering National University Of Singapore
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Lin W.
Department Of Electrical And Computer Engineering National University Of Singapore
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DONG Z.
Technology Development, Chartered Semiconductor Manufacturing Ltd.
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CHOOI S.
Technology Development, Chartered Semiconductor Manufacturing Ltd.
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ZHOU M.
Technology Development, Chartered Semiconductor Manufacturing Ltd.
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ANG T.
Technology Development, Chartered Semiconductor Manufacturing Ltd.
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ANG C.
Technology Development, Chartered Semiconductor Manufacturing Ltd.
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LAU W.
Technology Development, Chartered Semiconductor Manufacturing Ltd.
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Ang C.
Technology Development Chartered Semiconductor Manufacturing Ltd.
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Ang T.
Technology Development Chartered Semiconductor Manufacturing Ltd.
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Lau W.
Technology Development Chartered Semiconductor Manufacturing Ltd.
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Chooi S.
Technology Development Chartered Semiconductor Manufacturing Ltd.
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