Ordering InAs Quantum Dots Formation on GaAS/InP by Low Pressure Metal-Organic Chemical Vapor Deposition : Semiconductors
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概要
- 論文の詳細を見る
In the paper, a thin tensile GaAs interlayer was used to get regular arrangement of InAs quantum dots (QDs) on InP substrate by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The characterizations of the InAs QDS have been investigated by Photoluminescence (PL) spectrum, atomic force microscopy (AFM) image and Raman spectrum. The theoretical calculations have been performed. The conclusions coincide with our experiment results well.
- 社団法人応用物理学会の論文
- 2001-10-15
著者
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WANG Xinqiang
Department of Electronics and Mechanical Engineering, Venture Business Laboratory, and InN-Project a
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Wang Xinqiang
Department Of Electronic Engineering State Key Laboratory On Integrated Optoelectronics Jilin Univer
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Du Guotong
Department Of Electronic Engineering State Key Laboratory On Integrated Optoelectronics Jilin Univer
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LI Mingtao
Department of Pharmacology, Zhongshan Medical College, Sun Yat-sen University
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Li Mingtao
Department Of Electronic Engineering State Key Laboratory On Integrated Optoelectronics Jilin Univer
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YIN Jingzhi
Department of Electronic Engineering,State Key Laboratory on Integrated Optoelectronics, Jilin Unive
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YIN Zongyou
Department of Electronic Engineering,State Key Laboratory on Integrated Optoelectronics, Jilin Unive
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LI Zhengting
Department of Electronic Engineering,State Key Laboratory on Integrated Optoelectronics, Jilin Unive
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YANG Shuren
Department of Electronic Engineering,State Key Laboratory on Integrated Optoelectronics, Jilin Unive
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Yin Zongyou
Department Of Electronic Engineering State Key Laboratory On Integrated Optoelectronics Jilin Univer
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Yang Shuren
Department Of Electronic Engineering State Key Laboratory On Integrated Optoelectronics Jilin Univer
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Li Zhengting
Department Of Electronic Engineering State Key Laboratory On Integrated Optoelectronics Jilin Univer
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Yin J
Shanghai Jiao Tong Univ. Shanghai Chn
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- Ordering InAs Quantum Dots Formation on GaAS/InP by Low Pressure Metal-Organic Chemical Vapor Deposition : Semiconductors
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