Growth of Lattice-Matched ZnSe-ZnS Superlattices onto GaAs Substrates by Metalorganic Molecular Beam Epitaxy
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概要
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This paper describes the results of the first attempt to reduce misfit dislocations in epilayers of a wide-band-gap II-VI semiconductor on GaAs substrates by utilizing the ZnSe-ZnS strained-layer superlattice (SLS) structure. From a theoretical calculation, SLSs consisting of a 200 Å-ZnSe and a 10 Å-ZnS layer in one period can be grown as lattice-matched SLSs to GaAs. It has been found from the photoluminescence measurements and electron-beam-induced current (EBIC) image observations that the generation of misfit dislocations can be markedly reduced, as expected.
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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Yoshikawa Akihiko
Department Of Electrical And Electronics Engineering Chiba University
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Yamaga Shigeki
Department Of Electrical And Electronics Engineering Chiba University
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Yamaga Shigeki
Department Of Electrical And Electronics Engineering Faculty Of Engineering Chiba University
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ONIYAMA Hideyuki
Department of Electrical and Electronics Engineering, Faculty of Engineering, Chiba University
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Oniyama Hideyuki
Department Of Electrical And Electronics Engineering Faculty Of Engineering Chiba University
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