Takayama Toru | Solid State Electronics Laboratory Sis-x329 Stnford University:semiconductor Devicr Research Center
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概要
- 同名の論文著者
- Solid State Electronics Laboratory Sis-x329 Stnford University:semiconductor Devicr Research Center の論文著者
関連著者
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Takayama Tomoo
Department Of Metallurgy Kyoto University
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Takayama Toru
Solid State Electronics Laboratory Sis-x329 Stnford University:semiconductor Devicr Research Center
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Itoh Kikuo
Faculty Of General Education Kumamoto University
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Itoh Kimitaka
Plasma Physics Laboratory Kyoto University
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Itoh K
Discrete Device Division Semiconductor Co. Matsushita Electric Industrial Co. Ltd.
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Yuri M
Semiconductor Devices Research Center Semiconductor Co. Matsushita Electric Industrial Co. Ltd.
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IMAFUJI Osamu
Electronics Research Laboratory, Matsushita Electronics Corporation
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TAKAYAMA Toru
Electronics Research Laboratory, Matsushita Electronics Corporation
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YURI Masaaki
Electronics Research Laboratory, Matsushita Electronics Corporation
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ITOH Kunio
Electronics Research Laboratory, Matsushita Electronics Corporation
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Imafuji O
Semiconductor Co. Kyoto Jpn
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落合 庄治郎
京都大学工学研究科材料工学専攻
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OSAMURA Kozo
Department of Metallurgy,Kyoto University
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Ochiai Shojiro
Department Of Materials Science And Engineering Kyoto University
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Yoshikawa Akira
Ntt Lsi Laboratories
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Osamura Kozo
Department Of Metallurgy Kyoto University
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YOSHIKAWA Akihiko
Department of Electronics and Mechanical Engineering, Chiba University
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TAKAYAMA Tomoo
Department of Metallurgy, Kyoto University
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OSAMURA Kozo
Research Institute for Applied Sciences
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HASHIMOTO Tatsunori
Department of Electronics, Kyushu University
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Hashimoto T
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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YOSHIKAWA Akio
Electronics Research Laboratory, Matsushita Electronics Corporation
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Osamura K
Department Of Materials Science And Engineering Kyoto University
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Hashimoto Tadanori
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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Yoshikawa A
Chiba Univ. Chiba Jpn
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Osamura Kozo
Department Of Materials Science And Engineering Kyoto University
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Ochiai Shojiro
Department Of Materials Science And Engineering Graduate School Of Engineering Kyoto University
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Zhang W
Shanghai Inst. Ceramics Chinese Acad. Sci. Shanghai Chn
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TOMII Yoichi
Department of Metal Science and Technology, Kyoto University
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ZHANG Wai
Department of Metallurgy, Kyoto University
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UNESAKI Teruyoshi
Department of Metal Science and Technology, Kyoto University
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NAKAGAWA Isamu
Department of Metallurgy, Kyoto University
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HASHIMOTO Tadao
Electronics Research Laboratory, Matsushita Electronics Corporation
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HASHIMOTO Tadaro
Electronics Research Laboratory, Matsushita Electronics Corporation
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Zhang Wai
Department Of Metallurgy Kyoto University
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Itoh Kunio
Semiconductor Research Laboratory Matsushita Electronics Corporation
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Tomii Yoichi
Department Of Energy Science And Technology Graduate School Of Energy Science Kyoto University
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Yuri Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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S.harris Jr
Solid State Electronics Laboratory Sis-x329 Stnford University
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Kume Masahiro
Electronics Research Laboratory Matsushita Electronics Corporation
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Nakagawa I
Kyoto Univ. Kyoto Jpn
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Zhang Wangzhong
The State Key Laboratory Of High Performance Ceramics And Superfinemicrostructure Shanghai Institute
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Tomii Yoichi
Department Of Metal Science And Technology Faculty Of Engineering Kyoto Univelsity
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Tomii Yoichi
Department Of Metal Science And Technology Kyoto University
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Baba Takaaki
Semiconductor Devicr Research Center Semiconductor Company Matsushita Electronics Corporation
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Nakagawa Isamu
Department Of Metallurgy Kyoto University
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SUGIURA Hideyuki
Electronics Research Laboratory, Matsushita Electronics Corporation
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NAITO Hiroki
Electronics Research Laboratory, Matsushita Electronics Corporation
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Naito Hiroki
Electronics Research Laboratory Matsushita Electronics Corporation
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Sugiura Hideyuki
Electronics Research Laboratory Matsushita Electronics Corporation
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Unesaki Teruyoshi
Department Of Metal Science And Technology Kyoto University
著作論文
- Fracture Toughness Measurements of Ba_2YCu_3O_ Superconducting Oxide by Means of Indentation Technique : Electrical Properties of Condensed Matter
- Observations of Mixed-Phase Y-Ba-Cu-O Superconductors with a Scanning Electron Microscope at Low Temperatures : Electrical Properties of Condensed Matter
- Reduction of Beam Divergence Angle by Low-Refractive-Index Layers Introduced to Real-Refractive-Index-Guided GaAlAs High-Power Laser Diodes
- 120 mW High-Power Low-Noise GaAlAs Multiple-Quantum-Well Laser Diodes with a New Real Refractive Index Guided Self-Aligned Structure
- Analysis of Unstable Two-Phase Region in Wurtzite Group III Nitride Ternary Alloy Using Modified Valence Force Field Model
- Low-Noise and High-Power GaAlAs Laser Diodes with a New Real Refractive Index Guided Structure