CW Laser Annealing of Polycrystalline Silicon on SiO_2 and Effects of Successive Furnace Annealing

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概要

• 論文の詳細を見る

• CW Ar laser annealing was carried out to reduce the resistivity of polycrystalline silicon implanted with light doses of 1×10^<12>-5×10^<14>B^+/cm^2. Laser annealing, actually laser melting, and successive furnace annealing effectively reduced the resistivity to almost that of single crystal silicon. TEM, OM and stress observations revealed that the reduction was due primarily to the grain growth of polycrystalline silicon and secondarily to stress relief, from 9×10^9 dyne/cm^2 to 5×10^9 dyne/cm^2, caused by annealing. Grain growth of up to about 3×100 μm and bamboo-joint-like growth were observed.

• 社団法人応用物理学会の論文
• 1982-01-05

著者

• Kugimiya Koichi

  Central Research Laboratories Matsushita Elec. Ind. Co. Ltd.

• Kugimiya Koichi

  Central Research Lab. Matsushita Electric Industrial Co. Ltd.

• INOUE Kaoru

  Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.

• FUSE Genshu

  Central Research Laboratories, Matsushita Elec. Ind. Co. Ltd.

• Fuse Genshu

  Central Research Laboratories Matsushita Elec. Ind. Co. Ltd.

• Inoue Kaoru

  Central Research Laboratories Matsushita Elec. Ind. Co. Ltd.

関連論文

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• H_2-Enhanced Epitaxial Regrowth of Polycrystalline Silicon through Natural Oxide Layers on Silicon Substrates
• UV Laser Irradiation Effects on Frequemcy of Surface Acoustic Wave (SAW) Filters Coated with Titamium Oxide Films
• Piezoelectric Properties of Nanostructure-Controlled Lead-Perovskite-Based Ceramics ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• InP MESFET Grown by MOCVD
• CW Laser Annealing of Polycrystalline Silicon on SiO_2 and Effects of Successive Furnace Annealing
• The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO_2-Si
• A New Interferometric Alignment Technique with Holographie Configuration

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