Low-Temperature Fabrication of Pb(Zr, Ti)O_3 Films by RF Reactive Sputtering Using Zr/Ti+PbO Target

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概要

• 論文の詳細を見る

• Pb(Zr,Ti)O_3 (PZT) films were grown on fused quartz substrates by reactive sputtering using a Zr/Ti (50%/50%) alloy target combined with PbO pellets under argon pressure of 10mTorr and O_2/Ar flow rate ratio of 2.1%. Structure and deposition rate of the films have been investigated as functions of substrate temperature and PbO content. When films were grown in near metallic mode using a Zr/Ti+41% PbO target, perovskite PZT films were successfully prepared at a temperature as low as 450℃, and in the wide range from 450℃ to 570℃. It was impossible to obtain perovskite PZT films using only a stoichiometic Pb(Zr_<0.5>Ti_<0.5>)O_3 ceramic target, while perovskite PZT films could be obtained between 540℃ and 570℃ using a Pb(Zr_<0.5>Ti_<0.5>)O_3+15% PbO target. Deposition rate of perovskite films for the Zr/Ti+41% PbO target was 2-3 times higher than that for the PZT+15% PbO target.

• 社団法人応用物理学会の論文
• 1995-09-30

著者

• Sasaki Kimihiro

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Hata Toshio

  Electrotechnical Laboratory:tokai University

• Hata T

  Kanazawa Univ. Kanazawa Jpn

• Hata Tomonobu

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• ZHANG WeiXiao

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• Zhang Weixiao

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

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