Electrical Properties of Low-Temperature (45O℃) Pb(Zr, Ti)O_3 Films Prepared in Quasi-Metallic Mode by RF Reactive Sputtering

概要

論文の詳細を見る
Ferroelectric lead zirconate titanate (PZT) thin film were prepared on Pt/Ti/SiO_2/Si substrates from a ZrTi (50%/50%) alloy target combined with PbO pellets using an rf reactive sputter deposition technique. Perovskite PZT films were obtained at a growth temperature as low as 450℃ in the quasi-metallic mode. Crystalline structure, depth profiles, ferroelectric characteristics of the films prepared from the (ZrTi+30%PbO) target were investigated. The interdiffusion between the PZT film and the Pt/Ti/SiO_2/Si substrate was suppressed by the low-temperature sputtering. The remanent polarization, leakage current and dielectric constant decrease with increasing growth temperature. The perovskite films prepared at 450℃ exhibit the remanent polarization of 20 μC/cm^2, the coercive field of 150 kV/cm, the leakage current smaller than 10^<-6> A/cm^2 at the electric field lower than 235 kV/cm, and the dielectric constant as high as 561.
社団法人応用物理学会の論文
1996-09-30