Evaluation of Si Thin Films by Photothermal Deflection Spectroscopy (PDS)

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概要

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• This paper reports a theoretical and experimental study of a photothermal deflection spectroscopy (PDS) method for thin films. Multiple reflection of the incident light is taken into account in the theoretical analysis, using a simplified one-dimensional model. An experiment was performed to estimate the optical absorption coefficients α of a-Si:H and μc-Si:H films. It is possible to obtain the difference in α between these Si films very accurately even for αL<10^<-2>. Thus PDS is very effective for measuring the small absorption coefficients of thin films.

• 社団法人応用物理学会の論文
• 1985-11-20

著者

• Hatsuda T

  Kanazawa Univ. Kanazawa Jpn

• Hata Tomonobu

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Hatsuda Tsuguyasu

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University

• KOMATSU Tohru

  Department of Electrical Engineering, Faculty of Technology, Kanazawa University

• Komatsu Tohru

  Department Of Electrical Engineering Faculty Of Technology Kanazawa University

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