Transverse Mode Characteristics of a DBR-Surface Emitting Laser with Buried Heterostructure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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OGURA Mutsuo
Electrotechnical Laboratory
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Mori K
Sci. Univ. Tokyo In Yamaguchi Yamaguchi Jpn
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Okada Takumi
Electrotechnical Laboratory
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Asaka T
Seiko Epson Corporation
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Iwano H
Seiko Epson Corporation
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FUJII Seiji
Electrotechnical Laboratory
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MORI Masato
Electrotechnical Laboratory
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MORI Katsumi
Seiko Epson Corporation
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ASAKA Tatsuya
Seiko Epson Corporation
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IWANO Hideaki
Seiko Epson Corporation
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- Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- Transverse Mode Characteristics of a DBR-Surface Emitting Laser with Buried Heterostructure
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