Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-11-20

著者

• Kukimoto H

  National Space Dev. Agency Of Japan Ibaraki Jpn

• KUKIMOTO Hiroshi

  Imaging Science and Engineering Laboratory,Tokyo Institute of Technology

• Koyama Yoshihisa

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology

• Asaka T

  Seiko Epson Corporation

• Koyama Y

  Department Of Chemistry Faculty Of Science Kwansei Gakuin University

• BAN Yuzaburoh

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

• ISHIZAKI Mamoru

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

• Ban Yuzaburoh

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)semiconduc

• Kukimoto H

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri

• ASAKA Tatsuya

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

• Kukimoto Hiroshi

  Imaging Science And Engineering Lab. Tokyo Institute Of Technology

• Ishizaki Mamoru

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology

関連論文

• Band Discontinuity at Al_xGa_P/GaP Heterointerfaces Studied by Capacitance Measurements
• Short-Period Superlattices of (GaP)_n (AlP)_n Grown by Metalorganic Vapor Phase Epitaxy
• Existence of Mobility Edge in Amalgamation Bands of Mixed Crystals
• Raman Spectra in Al_xGa_As under High Pressure
• Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
• Dimethylamine as a Carbon Remover in Atomic Layer Epitaxy of AlAs
• Epitaxial Growth of CuGaS_2 by Metalorganic Chemical Vapor Deposition
• Deposition of Ga, Al and As Layers by Laser-Assisted Decomposition of Trimethylgallium, Trimethylaluminum and Arsine
• Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth
• Preparation of Pb-Doped Bi-Sr-Ca-Cu-O Superconducting Thin Films Grown by Chemical Vapor Deposition
• Superconducting Bi-Sr-Ca-Cu-O Thin Films Grown by Metalorganic Chemical Vapor Deposition at Different Temperatures
• Radiative and Non-Radiative Recombination Processes of Photo-Generated Carriers in ^a-Si_xC_:H (x〜0.2)
• Mecharrism Activating the 2^1Ag State in all-trans-β-Carotene Crystal to Resonance Raman Scattering
• GaAs P-N Junction and Doping Superlattices Grown by Laser-Assisted MOVPE
• Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE
• The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPE
• Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
• A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
• Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
• A Localized Defect in InP with Strong Temperature Dependence of Capture Cross-Section
• DX Deep Centers in Al_xGa_As Grown by Liquid-Phase Epitaxy
• Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
• Fabrication of a ZnSe-Based Vertical Fabry-Perot Cavity Using SiO_2/TiO_2 Multilayer Reflectors and Resonant Emission Characteristics
• Optically Pumped Stimulated Emission from CuGa(S_Se_)_2/CuAl_Ga_(S_Se_)_2 Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy
• Low-Temperature Metalorganic Vapor Phase Epitaxial Growth of CuAl_xGa_(S_ySe_)_2
• Metalorganic Vapor Phase Epitaxy of CuAl_xGa_(S_ySe_)_2
• Metalorganic Vapor Phase Epitaxy of CuGaS_2 Using Ditertiarybutylsulfide as the Sulfur Source
• Preparation of ZnS:Tm Films by Metalorganic Chemical Vapor Deposition Using Thulium β-Diketonates as Dopants
• Metalorganic Vapor Phase Epitaxy of CuGa(S_xSe_)_2 Lattice-Matched to GaP(100)
• Atomic Layer Epitaxy of AlAs and (AlAs)_n(GaAs)_n Superlattices Using Dimethylaluminumhydride as the Al Source
• Atomic Layer Epitaxy of AlAs Using Dimethylaluminumhydride/Trimethylaluminum Mixture as the Al Source
• Metalorganic Vapor Phase Epitaxial Growth of Lithium-Doped ZnS
• Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si
• The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
• Metastable Behavior of the DX Center in Si-Doped GaAs : Semiconductors and Semiconductor Devices
• Transverse Mode Characteristics of a DBR-Surface Emitting Laser with Buried Heterostructure
• Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition
• Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition
• Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure
• Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
• Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
• Blue-Green Stimulated Emission in Lattice-Matched ZnHgSSe/ZnSSe Double Heterostructures by Optical Pumping
• Blue-Emitting ac-Electroluminescent Cells Based on ZnS:Tm, Li Powder Phosphors
• Silver Addition and Zirconium Substitution in the YBa_2Cu_3O_ Prepared by Organic Acid Salt Thermal Decomposition Process
• Synthesis of Bi-Base High-T_c Oxide Superconductors through an Organic Acid Salt Thermal Decomposition Process
• A Study of Deep Levels in MOCVD-Grown InP/Semi-Insulationg InP Structure
• A Capacitance Investigation of InGaAs/InP Isotype Heterojunction
• Deep Levels in InP Grown by MOCVD
• Organometallic Vapor Phase Epitaxial Growth of In_Ga_xAs_yP_ on GaAs
• Optical Properties of a-Si:H Ultrathin Layers
• Light-Induced Degradation of Semiconductor Surfaces as Studied by Photoacoustic Spectroscopy: Photodarkening Process of Zn_xCd_S: Ag, Al Phosphors
• MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaP Substrates
• MOCVD Growth of InGaP on GaP Substrates and Its Application to Visible LEDs
• MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se
• Coherent Growth of ZnSe on GaAs by MOCVD
• Organometallic Vapor Phase Epitaxial Growth of In_Ga_xP(x〜0.5) on GaAs
• Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVD : Condensed Matter
• Near-Junction Concentration of Oxygen Donor and Its Correlation with Efficiency for GaP Red-Emitting Diodes
• Optical Cross Sections for the Zn-O Center in GaP
• Epitaxial Growth of Wide-Gap Chalcopyrite Materials : Current State and Future
• Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD
• A New Photoacoustic Method to Characterize Wider-Gap Epitaxial Layers on Narrower-Gap Substrates

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