MOCVD Growth of InGaP on GaP Substrates and Its Application to Visible LEDs
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概要
- 論文の詳細を見る
InGaP has been grown on GaP substrates by low pressure metalorganic chemical vapor deposition (MOCVD) using triethylindium, triethylgallium and phosphine. A buffer layer with step-graded alloy composition is inserted between the GaP substrate and the InGaP layer with a constant composition to reduce the influence of lattice mismatch. A trial fabrication of In_<0.34>Ga_<0.66>P light-emitting diodes(LEDs) has indicated that the diode efficiency is about one order of magnitude lower than commercially available GaAsP yellow LEDs. Further improvement in the efficiency is also discussed.
- 社団法人応用物理学会の論文
- 1987-03-20
著者
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Mori K
Saga Univ. Saga Jpn
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Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
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IWAMOTO Takashi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Mori K
Department Of Radiological Sciences Ibaraki Prefectural University Of Health Sciences
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Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
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IWAMOTO Takashi
Central Research Laboratory, Mitsubishi Electric Corporation
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MORI Kazuo
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Iwamoto T
Central Research Laboratory Mitsubishi Electric Corporation
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Iwamoto Takashi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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