Atomic Layer Epitaxy of AlAs and (AlAs)_n(GaAs)_n Superlattices Using Dimethylaluminumhydride as the Al Source
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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Yoshino Junji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
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Yoshino J
Department Of Physics Tokyo Institute Of Technology
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KANO Nobuo
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Kano Nobuo
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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ISHIZAKI Mamoru
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
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Kikumoto Hiroshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Ishizaki Mamoru
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
関連論文
- Band Discontinuity at Al_xGa_P/GaP Heterointerfaces Studied by Capacitance Measurements
- Short-Period Superlattices of (GaP)_n (AlP)_n Grown by Metalorganic Vapor Phase Epitaxy
- Existence of Mobility Edge in Amalgamation Bands of Mixed Crystals
- Raman Spectra in Al_xGa_As under High Pressure
- Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
- Dimethylamine as a Carbon Remover in Atomic Layer Epitaxy of AlAs
- Deposition of Ga, Al and As Layers by Laser-Assisted Decomposition of Trimethylgallium, Trimethylaluminum and Arsine
- Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth
- Preparation of Pb-Doped Bi-Sr-Ca-Cu-O Superconducting Thin Films Grown by Chemical Vapor Deposition
- Superconducting Bi-Sr-Ca-Cu-O Thin Films Grown by Metalorganic Chemical Vapor Deposition at Different Temperatures
- GaAs P-N Junction and Doping Superlattices Grown by Laser-Assisted MOVPE
- Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE
- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
- A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
- DX Deep Centers in Al_xGa_As Grown by Liquid-Phase Epitaxy
- Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
- Fabrication of a ZnSe-Based Vertical Fabry-Perot Cavity Using SiO_2/TiO_2 Multilayer Reflectors and Resonant Emission Characteristics
- Optically Pumped Stimulated Emission from CuGa(S_Se_)_2/CuAl_Ga_(S_Se_)_2 Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy
- Low-Temperature Metalorganic Vapor Phase Epitaxial Growth of CuAl_xGa_(S_ySe_)_2
- Metalorganic Vapor Phase Epitaxy of CuAl_xGa_(S_ySe_)_2
- Metalorganic Vapor Phase Epitaxy of CuGaS_2 Using Ditertiarybutylsulfide as the Sulfur Source
- Preparation of ZnS:Tm Films by Metalorganic Chemical Vapor Deposition Using Thulium β-Diketonates as Dopants
- Metalorganic Vapor Phase Epitaxy of CuGa(S_xSe_)_2 Lattice-Matched to GaP(100)
- Atomic Layer Epitaxy of AlAs and (AlAs)_n(GaAs)_n Superlattices Using Dimethylaluminumhydride as the Al Source
- Atomic Layer Epitaxy of AlAs Using Dimethylaluminumhydride/Trimethylaluminum Mixture as the Al Source
- Metalorganic Vapor Phase Epitaxial Growth of Lithium-Doped ZnS
- Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si
- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
- Metastable Behavior of the DX Center in Si-Doped GaAs : Semiconductors and Semiconductor Devices
- Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
- Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition
- Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
- Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
- Blue-Green Stimulated Emission in Lattice-Matched ZnHgSSe/ZnSSe Double Heterostructures by Optical Pumping
- Blue-Emitting ac-Electroluminescent Cells Based on ZnS:Tm, Li Powder Phosphors
- Organometallic Vapor Phase Epitaxial Growth of In_Ga_xAs_yP_ on GaAs
- MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaP Substrates
- MOCVD Growth of InGaP on GaP Substrates and Its Application to Visible LEDs
- MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se
- Coherent Growth of ZnSe on GaAs by MOCVD
- Organometallic Vapor Phase Epitaxial Growth of In_Ga_xP(x〜0.5) on GaAs