Preparation of Pb-Doped Bi-Sr-Ca-Cu-O Superconducting Thin Films Grown by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 1990-06-20
著者
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Yoshino Junji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
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Yoshino J
Department Of Physics Tokyo Institute Of Technology
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KUKIMOTO Hiroshi
Imaging Science and Engineering Laboratory,Tokyo Institute of Technology
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Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
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NATORI Katsuaki
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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YOSHIZAWA Shun-ichi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Natori Katsuaki
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Yoshizawa Shun-ichi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
関連論文
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- Raman Spectra in Al_xGa_As under High Pressure
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- Dimethylamine as a Carbon Remover in Atomic Layer Epitaxy of AlAs
- Epitaxial Growth of CuGaS_2 by Metalorganic Chemical Vapor Deposition
- Deposition of Ga, Al and As Layers by Laser-Assisted Decomposition of Trimethylgallium, Trimethylaluminum and Arsine
- Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth
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- Superconducting Bi-Sr-Ca-Cu-O Thin Films Grown by Metalorganic Chemical Vapor Deposition at Different Temperatures
- Radiative and Non-Radiative Recombination Processes of Photo-Generated Carriers in ^a-Si_xC_:H (x〜0.2)
- GaAs P-N Junction and Doping Superlattices Grown by Laser-Assisted MOVPE
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- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
- A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
- A Localized Defect in InP with Strong Temperature Dependence of Capture Cross-Section
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- Epitaxial Growth of Wide-Gap Chalcopyrite Materials : Current State and Future
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