Coherent Growth of ZnSe on GaAs by MOCVD
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概要
- 論文の詳細を見る
The lattice parameters of ZnSe have been studied for epitaxial layers of different thicknesses grown on GaAs (100) substrates by metalorganic chemical vapor deposition (MOCVD) using dimethylzinc and diethylselenide as source materials. The results indicate that layers thinner than 0.15 μm can grow coherently on GaAs involving strains due to the lattice mismatch between ZnSe and GaAs, while thicker layers contain misfit dislocations introduced by the relaxation of strain.
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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Mizuta Masashi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
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Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
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Mitsuhashi H
Materials And Devices Research Laboratories R & D Center Toshiba Corporation
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MITSUISHI Iwao
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Mitsuishi I
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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MITSUHASHI Hiroshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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