Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-06-01

著者

• Yamaguchi A

  System Devices And Fundamental Research Nec Corporation

• YAMAGUCHI ATSUSHI

  System Devices and Fundamental Research, NEC Corporation

• KURAMOTO Masaru

  System Devices and Fundamental Research, NEC Corporation

• KIMURA Akitaka

  System Devices and Fundamental Research, NEC Corporation

• NIDO Masaki

  System Devices and Fundamental Research, NEC Corporation

• MIZUTA Masashi

  System Devices and Fundamental Research, NEC Corporation

• Nido M

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Mizuta M

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Mizuta Masashi

  Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University

• Mizuta Masashi

  Fundamental Research Laboratries Nec Corporation

• Kuramoto M

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Kuramoto M

  The Authors Are With Optoelectronics And High Frequency Device Res. Labs. Nec Corporation

• Yamaguchi A.atsushi

  System Devices And Fundamental Research Nec Corporation

• Kimura A

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Mizuta Masashi

  Imaging Science And Engineering Lab. Tokyo Institute Of Technology

関連論文

• Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
• InGaN MQW Lasr Diodes Grown on an n-GaN Substrate with a Backside n-Contact(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
• Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
• Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
• Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
• Growth of InN by Chloride-Transport Vapor Phase Epitaxy
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
• A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
• Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
• Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
• Microwave Dielectric Properties of Ba_Sm_Ti_O_ Solid Solutions with Sr Substituted for Ba
• Microwave Dielectric Properties of the Ba_(Sm_, R_y)_Ti_O_(R=Nd and La) Solid Solutions with Zero Temperature Coefficient of the Resonant Frequency
• High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
• Dislocation propagation in GaN films formed by epitaxial lateral overgrowth
• A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
• Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
• A Localized Defect in InP with Strong Temperature Dependence of Capture Cross-Section
• Sequential Lattice Relaxation Model within the Double Configuration Coordinate for the DX Center in AlGaAs
• New Mechanism of Exciton Recombination in GaP : Exciton Bound to Neutral Donor and Neutral Acceptor Pair
• Recombination Processes in Anodized Porous-Si as Studied by Optically-Detected Magnetic Resonance
• Role of Minority-Carrier Diffusion in Photoreflectance Measurements of Epitaxial GaAs Wafers
• Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
• DX Deep Centers in Al_xGa_As Grown by Liquid-Phase Epitaxy
• Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
• The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
• Formation of Tungsten Bronze-Type (Ba_Sm_)_αTi_Al_yO_ (α=1+y/36) Solid Solutions and Microwave Dielectric Properties
• Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
• Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
• Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
• Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition
• Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition
• Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure
• Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
• Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
• Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy
• Hepatic Uptake of Lipid-Soluble Drugs from Fat Emulsion
• SOLVENT DRAG EFFECT IN DRUG INTESTINAL ABSORPTION : STUDIES ON DRUG AND D_2O ABSORPTION CLEARANCES
• Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities
• A Study of Deep Levels in MOCVD-Grown InP/Semi-Insulationg InP Structure
• A Capacitance Investigation of InGaAs/InP Isotype Heterojunction
• Deep Levels in InP Grown by MOCVD
• Organometallic Vapor Phase Epitaxial Growth of In_Ga_xAs_yP_ on GaAs
• Light-Induced Degradation of Semiconductor Surfaces as Studied by Photoacoustic Spectroscopy: Photodarkening Process of Zn_xCd_S: Ag, Al Phosphors
• SOLVENT DRAG IN JEJUNAL ABSORPTION OF SALICYLIC ACID AND ANTIPYRINE OBTAINED BY IN SITU SINGLE-PASS RERFUSION METHOD IN RAT
• Coherent Growth of ZnSe on GaAs by MOCVD
• Near-Junction Concentration of Oxygen Donor and Its Correlation with Efficiency for GaP Red-Emitting Diodes
• SOLVENT DRAG EFFECT IN DRUG INTESTINAL ABSORPTION. II. STUDIES ON DRUG ABSORPTION CLEARANCE AND WATER INFLUX
• SOLVENT DRAG EFFECT IN DRUG INTESTINAL ABSORPTION. I. STUDIES ON DRUG AND D_2O ABSORPTION CLEARANCES
• Optical Cross Sections for the Zn-O Center in GaP
• A New Photoacoustic Method to Characterize Wider-Gap Epitaxial Layers on Narrower-Gap Substrates

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