Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities
スポンサーリンク
概要
- 論文の詳細を見る
We performed extended X-ray absorption fine structure measurements on Al_<0.38>Ga_<0.62>As:Se in order to investigate the lattice relaxation accompanying the existence of the deep level. The local structure of Se donor impurities was observed by monitoring the Se K_α fluorescence yield. A small glancing angle arrangement was applied to suppress the effects of both Ga and As K_α fluorescence X-rays. The nearest-neighbor distances around Se were not influenced by the existence of the deep level.
- 社団法人応用物理学会の論文
- 1987-11-20
著者
-
Mizuta Masashi
Fundamental Research Laboratries Nec Corporation
-
Mizuta Masashi
Fundamental Reseach Laboratories Nec Corporation
-
KITANO Tomohisa
Fundamental Research Laboratories, NEC Corporation
-
Kitano Tomohisa
Fundamental Reseach Laboratories Nec Corporation
関連論文
- Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
- Fluorescence EXAFS Study of Zn-Doped LEC InP Crystal : Condensed Matter
- Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
- Generation Rule of the Slip Dislocation in LEC GaAs Crystal
- The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method
- X-Ray Topography Examination of Lattice Distortions in LEC-Grown GaAs Single Crystals
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
- Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
- Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
- Microwave Dielectric Properties of Ba_Sm_Ti_O_ Solid Solutions with Sr Substituted for Ba
- Microwave Dielectric Properties of the Ba_(Sm_, R_y)_Ti_O_(R=Nd and La) Solid Solutions with Zero Temperature Coefficient of the Resonant Frequency
- High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
- Generation of Slip Dislocations during Czochralski Growth of Semiconductor Crystals Pullen in a Axis
- A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
- Sequential Lattice Relaxation Model within the Double Configuration Coordinate for the DX Center in AlGaAs
- New Mechanism of Exciton Recombination in GaP : Exciton Bound to Neutral Donor and Neutral Acceptor Pair
- Recombination Processes in Anodized Porous-Si as Studied by Optically-Detected Magnetic Resonance
- Role of Minority-Carrier Diffusion in Photoreflectance Measurements of Epitaxial GaAs Wafers
- Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
- DX Deep Centers in Al_xGa_As Grown by Liquid-Phase Epitaxy
- Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
- Formation of Tungsten Bronze-Type (Ba_Sm_)_αTi_Al_yO_ (α=1+y/36) Solid Solutions and Microwave Dielectric Properties
- Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
- Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
- Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition
- Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
- Structure Characterization of Fe-B Amorphous Alloys by a Laboratory EXAFS Spectrometer
- Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities
- Appropriate Pulling Axis Orientation to Suppress Slip Dislocation Generation during Czochralski Growth of Semiconductor Crystals : Condensed Matter