New Mechanism of Exciton Recombination in GaP : Exciton Bound to Neutral Donor and Neutral Acceptor Pair
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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Mizuta Masashi
Fundamental Research Laboratries Nec Corporation
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Mizuta Masashi
Fundamental Research Laboratories Nec Corporation
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Mizuta Masashi
Fundamental Reseach Laboratories Nec Corporation
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Mochizuki Yasunori
Fundamental Research Laboratories Nec Corporation
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Mochizuki Yasunori
Fundamental Research Laboratories Nec Coeporation
関連論文
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- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
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- Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
- Microwave Dielectric Properties of Ba_Sm_Ti_O_ Solid Solutions with Sr Substituted for Ba
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- A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
- Sequential Lattice Relaxation Model within the Double Configuration Coordinate for the DX Center in AlGaAs
- New Mechanism of Exciton Recombination in GaP : Exciton Bound to Neutral Donor and Neutral Acceptor Pair
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- Role of Minority-Carrier Diffusion in Photoreflectance Measurements of Epitaxial GaAs Wafers
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- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
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