Mizuta Masashi | Fundamental Reseach Laboratories Nec Corporation
スポンサーリンク
概要
関連著者
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Mizuta Masashi
Fundamental Research Laboratries Nec Corporation
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Mizuta Masashi
Fundamental Reseach Laboratories Nec Corporation
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Mizuta Masashi
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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Mochizuki Yasunori
Fundamental Research Laboratories Nec Corporation
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Mochizuki Yasunori
Fundamental Research Laboratories Nec Coeporation
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OKUMI Shoji
Graduate School of Science, Nagoya University
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Omori Tsunehiko
Kek National Laboratory For High Energy Physics
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Okumi S
Nagoya Univ. Nagoya Jpn
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Matsuyama T
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Matsunaka Toshiyuki
Department Of Physics & Electronics Osaka Prefecture University
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TSUBATA Mitsuru
Nagoya University
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Yoshioka Masahiro
NMIJ AIST
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Takeuchi Yasunori
Kek National Laboratory For High Energy Physics
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Matsumoto Yoshinari
Department Of Electrical And Electronic Engineering Toyo University
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Matsuyama Tetsuya
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Yoshioka Masakazu
Kek National Laboratory For High Energy Physics
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Tawada Masafumi
Department Of Physics Nagoya University:(present Address)kek National Laboratory For High Energy Phy
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MATSUMOTO Yoshishige
Fundamental Research Laboratories, NEC Corporation
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Takeuchi Y
Institute For Materials Research Tohoku University
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Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
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Togawa Kazuaki
Department Of Physics Faculty Of Science Nagoya University
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Fujieda S
Nec Corp. Ibaraki Jpn
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Fujieda Shinji
Fundamental Research Laboratories Nec Corporation:microelectronics Research Laboratories Nec Corpora
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Fujieda Shinji
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Nakanishi T
Graduate School Of Science Nagoya University
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Kurihara Y
Teikyo Heisei Univ. Chiba Jpn
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Matsumoto Y
Nara Inst. Sci. And Technol. Ikoma‐shi Jpn
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Matsumoto Yoshishige
Fundamental Research Laboratories Nec Corporation
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Fujieda Shinji
Fundamental Research Laboratories Nec Corporation
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Matsumoto Yuji
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kamiya Y
Kek Ibaraki Jpn
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Mizuta Masashi
Fundamental Research Laboratories Nec Corporation
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KURIHARA Yoshimasa
KEK, High Energy Accelerator Research Organization
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OMORI Tsunehiko
KEK, High Energy Accelerator Research Organization
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TAKEUCHI Yasunori
KEK, National Laboratory for High Energy Physics
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YOSHIOKA Masakazu
KEK, National Laboratory for High Energy Physics
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NAKANISHI Tsutomu
Faculty of Pharmaceutical Sciences,Setsunan University
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SUZUKI Chihiro
Department of Neurology, Tohoku University Graduate School of Medicine
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Matsumoto Y
Materials And Structures Laboratory Tokyo Institute Of Technology
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Yoshino Junji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Aoyagi Hideki
Stanford Linear Accelerator Center Stanford University:(present Address) Nagoya University
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Aoyagi Hideki
College Of Engineering University Of Osaka Prefecture:(present Address)japan Synchrotron Radiation R
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NAKANISHI Tsutomu
Department of Physics, Nagoya University
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KITANO Tomohisa
Fundamental Research Laboratories, NEC Corporation
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Yoshino J
Department Of Physics Tokyo Institute Of Technology
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Kitano Tomohisa
Fundamental Reseach Laboratories Nec Corporation
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TAKAHASHI Chikako
Faculty of Pharmaceutical Sciences, Chiba University
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TAWADA Masafumi
Department of Physics, Nagoya University
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NISHITANI Kazuharu
Accelerator Technology Corporation
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OKUMI Shoji
Department of Physics, Nagoya University
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TOGAWA Kazuaki
Department of Physics, Nagoya University
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KURIHARA Yoshimasa
National Laboratory for High Energy Physics (KEK) Tsukuba
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TAKEUCHI Yasunori
National Laboratory for High Energy Physics (KEK) Tsukuba
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YOSHIOKA Masakazu
National Laboratory for High Energy Physics (KEK) Tsukuba
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OMORI Tsunehiko
National Laboratory for High Energy Physics (KEK)
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NAKANISHI Tsutomu
Nagoya University
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OKUMI Syooji
Nagoya University
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TAWADA Mmasabumi
Nagoya University
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TOGAWA Kazuaki
Nagoya University
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ALLEY Raymond
Stanford Linear Accelerator Center, Stanford University
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CLENDENIN James
Stanford Linear Accelerator Center, Stanford University
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FRISCH Josef
Stanford Linear Accelerator Center, Stanford University
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MULHOLLAN Gregory
Stanford Linear Accelerator Center, Stanford University
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SAEZ Pablo
Stanford Linear Accelerator Center, Stanford University
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SCHULTZ David
Stanford Linear Accelerator Center, Stanford University
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TANG Huan
Stanford Linear Accelerator Center, Stanford University
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WITTE Klaus
Stanford Linear Accelerator Center, Stanford University
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OKUMI Shoji
Faculty of Science, Nagoya University
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TSUBATA Mitsuru
Faculty of Science, Nagoya University
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TAWADA Masafumi
Faculty of Science, Nagoya University
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TOGAWA Kazuaki
Faculty of Science, Nagoya University
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TANIMOTO Yasunori
Faculty of Science, Nagoya University
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KUKIMOTO Hiroshi
Imaging Science and Engineering Laboratory,Tokyo Institute of Technology
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Takahashi Chikako
Faculty Of Science Nagoya University
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Takahashi Chikako
Faculty Of Pharmaceutical Sciences Chiba University
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Tang Huan
Stanford Linear Accelerator Center Stanford University
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Saez Pablo
Stanford Linear Accelerator Center Stanford University
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Witte Klaus
Stanford Linear Accelerator Center Stanford University
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Frisch Josef
Stanford Linear Accelerator Center Stanford University
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Schultz David
Stanford Linear Accelerator Center Stanford University
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Alley Raymond
Stanford Linear Accelerator Center Stanford University
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Clendenin James
Stanford Linear Accelerator Center Stanford University
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Mulhollan Gregory
Stanford Linear Accelerator Center Stanford University
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Suzuki Chihiro
Department Of Physics Nagoya University
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Baba Toshio
Fundamental Research Laboratories Nec Corporation
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OSHIYAMA Atsushi
Fundamental Research Laboratories,NEC Corporation
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Fujisawa Toshimasa
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Takahashi C
Ntt Telecommunications Energy Laboratories
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Mizuta Masashi
Fundamental Research Laboratories Nec Coeporation
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ISHII Toshihiro
Fundamental Research Laboratories, NEC Corporation
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Ishii Toshihiro
Fundamental Research Laboratories Nec Corporation:university Of Tsukuba.
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Fujisawa Toshimasa
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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KAWAMURA Tsutomu
Fundamental Research Laboratories, NEC Corporation
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Suzuki Chihiro
Department Of Biomembrane And Biofunctional Chemistry Faculty Of Advanced Life Sciences Hokkaido Uni
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Oshiyama Atsushi
Fundamental Research Laboratories Nec Coeporation
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Oshiyama Atsushi
Fundamental Res. Nec Corp
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Kawamura Tsutomu
Fundamental Research Laboratories Nec Corporation
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Kurihara Yoshimasa
National Laboratory For High Energy Physics (kek)
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Nakanishi Tsutomu
Faculty Of Pharmaceutical Sciences Setsunan University
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Nakanishi Tsutomu
Department Of Mechanical Systems Engineering Faculty Of Engineering Miyazaki University
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Nakanishi Tsutomu
Faculty Of Engineering Miyazaki University
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Nakanishi Tsutomu
Department Of Materials Sciences Waseda Universit
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Okumi Shoji
Department of Physics, Faculty of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
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BABA Toshio
Fundamental Research Laboratories, NEC Corportion
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MIZUTA Masashi
Fundamental Research Laboratories, NEC Corportion
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MIZUTA Masashi
Fundamental Research Laboratories, NEC Corporation
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Nakanishi Tsutomu
Department of Materials Science and Engineering, Waseda University, Tokyo 169-8555, Japan
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OKUMI Shoji
Department of Physics, Faculty of Science, Nagoya University
著作論文
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
- Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
- Sequential Lattice Relaxation Model within the Double Configuration Coordinate for the DX Center in AlGaAs
- New Mechanism of Exciton Recombination in GaP : Exciton Bound to Neutral Donor and Neutral Acceptor Pair
- Recombination Processes in Anodized Porous-Si as Studied by Optically-Detected Magnetic Resonance
- Role of Minority-Carrier Diffusion in Photoreflectance Measurements of Epitaxial GaAs Wafers
- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
- Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
- Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
- Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
- Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities