The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-06-20

著者

• Yoshino Junji

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology

• Mizuta Masashi

  Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University

• Mizuta Masashi

  Fundamental Research Laboratries Nec Corporation

• Mizuta Masashi

  Fundamental Reseach Laboratories Nec Corporation

• BABA Toshio

  Fundamental Research Laboratories, NEC Corporation

• Yoshino J

  Department Of Physics Tokyo Institute Of Technology

• KUKIMOTO Hiroshi

  Imaging Science and Engineering Laboratory,Tokyo Institute of Technology

• Baba Toshio

  Fundamental And Environmental Research Laboratories Nec Corporation

• Fujisawa Toshimasa

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

• Fujisawa Toshimasa

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology

• Kukimoto Hiroshi

  Imaging Science And Engineering Lab. Tokyo Institute Of Technology

• BABA Toshio

  Fundamental Research Laboratories, NEC Corportion

• MIZUTA Masashi

  Fundamental Research Laboratories, NEC Corportion

関連論文

• Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
• Band Discontinuity at Al_xGa_P/GaP Heterointerfaces Studied by Capacitance Measurements
• Short-Period Superlattices of (GaP)_n (AlP)_n Grown by Metalorganic Vapor Phase Epitaxy
• Characterization of Depletion-Type Surface Tunnel Transistors
• Surface Tunnel Transistors with Multiple Interband Tunnel Junctions (Special Issue on New Concept Device and Novel Architecture LSIs)
• First Observation of Negative Differential Resistance in Surface Tunnel Transistors
• Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
• Improved Negative Differential Resistance Characteristics in Surface Tunnel Transistors
• Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
• A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
• Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
• Highly Enhanced Speed and Efficiency of Si Nano-Photodiode with a Surface-Plasmon Antenna
• Si Nano-Photodiode with a Surface Plasmon Antenna
• Existence of Mobility Edge in Amalgamation Bands of Mixed Crystals
• Raman Spectra in Al_xGa_As under High Pressure
• Surface Tunnel Transistor: Gate-Controlled Lateral Interband Tunneling Device
• High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
• Dimethylamine as a Carbon Remover in Atomic Layer Epitaxy of AlAs
• DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
• Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
• Epitaxial Growth of CuGaS_2 by Metalorganic Chemical Vapor Deposition
• Deposition of Ga, Al and As Layers by Laser-Assisted Decomposition of Trimethylgallium, Trimethylaluminum and Arsine
• Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth
• Microwave Dielectric Properties of Ba_Sm_Ti_O_ Solid Solutions with Sr Substituted for Ba
• Microwave Dielectric Properties of the Ba_(Sm_, R_y)_Ti_O_(R=Nd and La) Solid Solutions with Zero Temperature Coefficient of the Resonant Frequency
• Preparation of Pb-Doped Bi-Sr-Ca-Cu-O Superconducting Thin Films Grown by Chemical Vapor Deposition
• Superconducting Bi-Sr-Ca-Cu-O Thin Films Grown by Metalorganic Chemical Vapor Deposition at Different Temperatures
• High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
• Radiative and Non-Radiative Recombination Processes of Photo-Generated Carriers in ^a-Si_xC_:H (x〜0.2)
• GaAs P-N Junction and Doping Superlattices Grown by Laser-Assisted MOVPE
• Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE
• The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPE
• Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
• A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
• Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
• A Localized Defect in InP with Strong Temperature Dependence of Capture Cross-Section
• Sequential Lattice Relaxation Model within the Double Configuration Coordinate for the DX Center in AlGaAs
• New Mechanism of Exciton Recombination in GaP : Exciton Bound to Neutral Donor and Neutral Acceptor Pair
• Recombination Processes in Anodized Porous-Si as Studied by Optically-Detected Magnetic Resonance
• Role of Minority-Carrier Diffusion in Photoreflectance Measurements of Epitaxial GaAs Wafers
• Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
• DX Deep Centers in Al_xGa_As Grown by Liquid-Phase Epitaxy
• Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
• Fabrication of a ZnSe-Based Vertical Fabry-Perot Cavity Using SiO_2/TiO_2 Multilayer Reflectors and Resonant Emission Characteristics
• Optically Pumped Stimulated Emission from CuGa(S_Se_)_2/CuAl_Ga_(S_Se_)_2 Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy
• Low-Temperature Metalorganic Vapor Phase Epitaxial Growth of CuAl_xGa_(S_ySe_)_2
• Metalorganic Vapor Phase Epitaxy of CuAl_xGa_(S_ySe_)_2
• Metalorganic Vapor Phase Epitaxy of CuGaS_2 Using Ditertiarybutylsulfide as the Sulfur Source
• Preparation of ZnS:Tm Films by Metalorganic Chemical Vapor Deposition Using Thulium β-Diketonates as Dopants
• Metalorganic Vapor Phase Epitaxy of CuGa(S_xSe_)_2 Lattice-Matched to GaP(100)
• Atomic Layer Epitaxy of AlAs and (AlAs)_n(GaAs)_n Superlattices Using Dimethylaluminumhydride as the Al Source
• Atomic Layer Epitaxy of AlAs Using Dimethylaluminumhydride/Trimethylaluminum Mixture as the Al Source
• Metalorganic Vapor Phase Epitaxial Growth of Lithium-Doped ZnS
• Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si
• The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
• Metastable Behavior of the DX Center in Si-Doped GaAs : Semiconductors and Semiconductor Devices
• Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
• One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
• Formation of Tungsten Bronze-Type (Ba_Sm_)_αTi_Al_yO_ (α=1+y/36) Solid Solutions and Microwave Dielectric Properties
• Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
• Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
• Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
• Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition
• Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition
• Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure
• Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
• Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
• Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
• Monte Carlo Simulation of Resonant Tunneling Diode
• Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
• Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
• Multiple-Valued Memory Operation Using a Single-Electron Device : a Proposal and an Experimental Demonstration of a Ten-Valued Operation
• Blue-Green Stimulated Emission in Lattice-Matched ZnHgSSe/ZnSSe Double Heterostructures by Optical Pumping
• Blue-Emitting ac-Electroluminescent Cells Based on ZnS:Tm, Li Powder Phosphors
• Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities
• Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
• Hot Electron Transport in Si-MOSFETs
• Transport Properties in Sub-10-nm-gate EJ-MOSFETs
• Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
• Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
• A Study of Deep Levels in MOCVD-Grown InP/Semi-Insulationg InP Structure
• A Capacitance Investigation of InGaAs/InP Isotype Heterojunction
• Deep Levels in InP Grown by MOCVD
• Organometallic Vapor Phase Epitaxial Growth of In_Ga_xAs_yP_ on GaAs
• Direct Tunneling from Source to Drain in Nanometer-Scale Silicon Transistors
• Optical Properties of a-Si:H Ultrathin Layers
• Light-Induced Degradation of Semiconductor Surfaces as Studied by Photoacoustic Spectroscopy: Photodarkening Process of Zn_xCd_S: Ag, Al Phosphors
• 4.2 K Operation of InAlAs/InGaAs Heterojunction Bipolar Transistor
• MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaP Substrates
• MOCVD Growth of InGaP on GaP Substrates and Its Application to Visible LEDs
• MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se
• Coherent Growth of ZnSe on GaAs by MOCVD
• Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy
• Proposal for Surface Tunnel Transistors
• Organometallic Vapor Phase Epitaxial Growth of In_Ga_xP(x〜0.5) on GaAs

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