Characterization of Depletion-Type Surface Tunnel Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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Uemura Tetsuya
Fundamental Research Laboratories Nec Corporation
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
関連論文
- Characterization of Depletion-Type Surface Tunnel Transistors
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- First Observation of Negative Differential Resistance in Surface Tunnel Transistors
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- Improved Negative Differential Resistance Characteristics in Surface Tunnel Transistors
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- Surface Tunnel Transistor: Gate-Controlled Lateral Interband Tunneling Device
- High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
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- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
- DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
- Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
- Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
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- Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
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