Multiple-Valued Memory Operation Using a Single-Electron Device : a Proposal and an Experimental Demonstration of a Ten-Valued Operation
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概要
- 論文の詳細を見る
A method to construct a multiple-valued (MV) memory device with large capacity using a single-electron device is proposed. The proposed method uses an oscillatory behavior of a single-electron transistor (SET) output current to represent MVs. Experimental demonstration of a successful MV memory operation of more than ten-values is presented using a device that utilizes carrier traps in a silicon nitride (SiN_x) layer as memory node and an Al-based SET for electrometer.
- 社団法人応用物理学会の論文
- 2002-02-01
著者
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SAKAMOTO Toshitsugu
Fundamental Research Laboratories, NEC Corporation
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Sunamura H
Nec Corp. Ibaraki
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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KAWAURA Hisao
Fundamental and Environmental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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SUNAMURA Hiroshi
Fundamental Research Laboratories, NEC Corporation
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Sakamoto Toshitsugu
Fundamental Research Laboratories Nec Corporation
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation:(Present office)Silicon System Laboratories, NEC Corporation
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Sakamoto Toshitsugu
Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
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