KAWAURA Hisao | Fundamental and Environmental Research Laboratories, NEC Corporation
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概要
- KAWAURA Hisaoの詳細を見る
- 同名の論文著者
- Fundamental and Environmental Research Laboratories, NEC Corporationの論文著者
関連著者
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KAWAURA Hisao
Fundamental and Environmental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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SAKAMOTO Toshitsugu
Fundamental Research Laboratories, NEC Corporation
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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Sakamoto Toshitsugu
Fundamental Research Laboratories Nec Corporation
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Sakamoto Toshitsugu
Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
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SAKAMOTO Tetsuo
Institute of Industrial Science, The University of Tokyo
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Sakamoto Toshitugu
Faculty Of Engineering Science Osaka University
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Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
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Shiokawa Takao
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Sakamoto T
Department Of Communication Engineering Faculty Of Computer Science And System Engineering Okayama P
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Kawaura H
Fundamental Research Laboratories Nec Caporation
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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Fujita J
Crest-jst
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Hongo Hiroo
Fundamental Research Laboratories Nec Caporation
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Hongo Hiroo
Fundamental Research Laboratories Nec Coporation
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Aono Masakazu
Icorp/japan Science And Technology Agency
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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Sunamura H
Nec Corp. Ibaraki
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Kaeriyama Shunichi
System Devices Research Laboratories Nec Corporation
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BANNO Naoki
System Devices Research Laboratories, NEC Corporation
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SAKAMOTO Toshitsugu
System Devices Research Laboratories, NEC Corporation
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IGUCHI Noriyuki
Fundamental and Environmental Research Laboratories, NEC Corporation
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MIZUNO Masayuki
System Devices Research Laboratories, NEC Corporation
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TERABE Kozuya
ICORP, Japan Science and Technology Agency (JST)
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HASEGAWA Tsuyoshi
ICORP, Japan Science and Technology Agency (JST)
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Ochiai Yukinori
Fundamental Research Laboratories Nec Caporation
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Mizuno Masayuki
System Devices Research Laboratories Nec Corporation
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Mizuno Masayuki
System Devices And Fundamental Research Silicon Systems Research Laboratories Nec Corporation
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Manaka Susumu
Fundamental Research Laboratories Nec Corporation
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Aono M
Inst. Of Physical And Chemical Res. Wako Jpn
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Terabe Kazuya
National Institute For Materials Science
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Aono M
Physical And Chemical Res. (riken) Saitama
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Kawaura Hisao
Jst/icorp
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Kawaura Hisao
Fundamental Research Laboratories Nec Corporation
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Banno Naoki
Device Platforms Research Laboratories Nec Corporation:japan Science And Technology Agency
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Iguchi Noriyuki
Nano Electronics Research Laboratories Nec Corporation:japan Science And Technology Agency
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SUNAMURA Hiroshi
Fundamental Research Laboratories, NEC Corporation
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Baba T
Fundamental Research Laboratories Nec Corporation
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Sakamoto Toshitsugu
Device Platforms Research Laboratories Nec Corporation:japan Science And Technology Agency
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Hasegawa Tsuyoshi
National Institute For Materials Science
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Kawaura Hisao
Fundamental Research Laboratories Nec Caporation
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Aono Masakazu
The Institute Of Physical And Chemical Research (riken):department Of Precision Science And Technolo
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Aono Masakazu
National Institute For Researches In Inorganic Materials
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Aono Masakazu
Aono Atomcraft Project Erato Jrdc:surface And Interface Laboratory The Institute Of Physical And Che
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IIZUKA Takahiro
ULSI Device Development Labs., NEC
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Aono Masakazu
The Institute Of Physical And Chemical Research (riken):department Of Precision Science And Technolo
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Iizuka Takahiro
Ulsi Device Development Labs. Nec
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Aono Masakazu
ICORP, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation:(Present office)Silicon System Laboratories, NEC Corporation
著作論文
- Solid-Electrolyte Nanometer Switch(Novel Device Architectures and System Integration Technologies)
- Resolution of 1:1 Electron Stepper with Patterned Cold Cathode
- Multiple-Valued Memory Operation Using a Single-Electron Device : a Proposal and an Experimental Demonstration of a Ten-Valued Operation
- Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
- Hot Electron Transport in Si-MOSFETs
- Transport Properties in Sub-10-nm-gate EJ-MOSFETs
- Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
- Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
- Direct Tunneling from Source to Drain in Nanometer-Scale Silicon Transistors