DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-05-20

著者

• BABA Toshio

  Fundamental Research Laboratories, NEC Corporation

• OGAWA Masaki

  Fundamental Research Laboratories, NEC Corporation

• Matsumoto Yoshinari

  Department Of Electrical And Electronic Engineering Toyo University

• IWATA Naotaka

  Fundamental Research Laboratories, NEC Corporation

• MATSUMOTO Yoshishige

  Fundamental Research Laboratories, NEC Corporation

• Baba T

  Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co

• Baba Toshio

  Fundamental And Environmental Research Laboratories Nec Corporation

• Matsumoto Y

  Nara Inst. Sci. And Technol. Ikoma‐shi Jpn

• Iwata N

  Fundamental Research Laboratories Nec Corporation

• Matsumoto Yoshishige

  Fundamental Research Laboratories Nec Corporation

• Ogawa Masaki

  Fundamental Research Laboratories Nec Corporation

• Matsumoto Yuji

  Materials And Structures Laboratory Tokyo Institute Of Technology

関連論文

• Interferometry of KrF-Laser-Produced Plasma by Shortened Stokes Pulse
• Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments
• Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments
• Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface
• Interfacial Superstructure of AIN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces and Films
• Epitaxial Stress Effect on Crystallographic Properties of Bi_4Ti_3O_ Heterostructures and Their Leakage Current Behaviors
• Memory Retention and Switching Speed of Ferroelectric Field Effect in (Pb, La)(Ti, Zr)O_3/La_2CuO_4:Sr Heterostructure
• A Preliminary Experimental Study on Dielectric Properties of Metal/(Pb, La)(Ti, Zr)O_3/Semiconductive Perovskite Heterostructures
• All-Perovskite Ferroelectric/Semiconductor Field Effect Transistor
• Crystallographic and Electrical Properties of Epitaxial BaTiO_3 Film Grown on Conductive and Insulating Perovskite Oxides ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Characterization of Depletion-Type Surface Tunnel Transistors
• Photochemical Identification of a Possible Adsorbed Pentacene Molecule on the SrTiO_3(001)
• Preparation of Atomically Smooth TiO_2 Single Crystal Surfaces and Their Photochemical Property
• Chemical trend of Fermi-level shift in transition metal-doped TiO2 films
• Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition
• Molecular layer-by-layer growth of C-60 thin films by continuous-wave infrared laser deposition
• Surface Tunnel Transistors with Multiple Interband Tunnel Junctions (Special Issue on New Concept Device and Novel Architecture LSIs)
• First Observation of Negative Differential Resistance in Surface Tunnel Transistors
• Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
• Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
• GaInAsP Microdisk Injection Laser with Benzocyclobutene Polymer Cladding and Its Athermal Effect
• GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
• Proposal of Optical Near-Field Probe Using Evanescent Field of Microdisk Laser
• Improved Negative Differential Resistance Characteristics in Surface Tunnel Transistors
• Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
• A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
• Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
• Highly Enhanced Speed and Efficiency of Si Nano-Photodiode with a Surface-Plasmon Antenna
• Si Nano-Photodiode with a Surface Plasmon Antenna
• Surface Tunnel Transistor: Gate-Controlled Lateral Interband Tunneling Device
• H-Tree-Type Optical Clock Signal Distribution Circuit Using a Si Photonic Wire Waveguide : Optics and Quantum Electronics
• Low Loss Ultra-Small Branches in a Silicon Photonic Wire Waveguide(Special Issue on Recent Progress of Integrated Photonic Devices)
• High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
• Single Electron Device with Asymmetric Tunnel Barriers
• DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
• Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
• Simple Ultraviolet Short-Pulse Intensity Diagnostic Method Using Atmosphere
• High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
• Transformation of Egg-White Glass into Partially Crystallized Glass Induced by Heat Treatment and Gamma-Ray Irradiation
• Fluctuation of the Electrical Conductivity Associated with the Glass Transition of xKNO_3・(100-x)Sr(NO_3)_2 Glasses
• Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns
• Low-Temperature ^Sn-Mossbauer Study of Superconducting Bi_4Sr_Ca_Cu_4Sn_O_ Ceramic (2212 Phase)
• ^Sn-Mossbauer Study on the Normal Lattice Vibration of Superconducting Bi(Pb)_2Sr_2Ca_2Cu_3Sn_O_
• Precipitation of Mayenite in 60CaO・35Al_2O_3・5Fe_2O_3 Glass Annealed at Several Temperatures Below and Above the Glass Transition Temperature
• Softening of Cu(1)-Site Vibration Matched with the Onset Temperature of Superconducting YBa_2(Cu_Sn_)_3O_
• The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
• Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
• Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
• Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
• ^Sn-Mossbauer Spectroscopic Study of High-T_c Superconducting YBa_2(Cu_Sn_)_3O_ and the Gamma-Ray Irradiation Effect
• Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
• Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
• Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
• Monte Carlo Simulation of Resonant Tunneling Diode
• Observation of fast spontaneous emission decay in GaInAsP photonic crystal point defect nanocavity at room temperature
• Light localizations in photonic crystal line defect waveguides
• Ultralow threshold and single-mode lasing in microgear lasers and its fusion with quasi-periodic photonic crystals
• A Novel Short Cavity Laser with Deep Grating DBRs
• Multiple-Valued Memory Operation Using a Single-Electron Device : a Proposal and an Experimental Demonstration of a Ten-Valued Operation
• Synthesis and Characterization of Thin Films of a Half-Metallic Oxide, Sr2FeMoO6, by Combinatorial Techniques
• Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching
• Enhancement of Quantum Ferroelectricity in SrTi18O3 Thin Film
• Silicon nano-scale devices
• Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
• Hot Electron Transport in Si-MOSFETs
• Transport Properties in Sub-10-nm-gate EJ-MOSFETs
• Si In-Plane Floating-Dot Memory with a Single Electron Transistor
• Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
• Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
• Spatial Distributions of Individual Traps in a Si/SiO_2 Interface
• Spatial Distributions of Individual Traps in a Si/SiO_2 Interface
• Single 1.5V Operation Power Amplifier MMIC with SrTiO_3 Capacitors for 2.4GHz Wireless Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
• Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
• Direct Tunneling from Source to Drain in Nanometer-Scale Silicon Transistors
• SrTiO_3 Capacitor with Relative Dielectric Constant of 200 on GaAs Substrate at Microwave Frequency
• 4.2 K Operation of InAlAs/InGaAs Heterojunction Bipolar Transistor
• Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy
• Proposal for Surface Tunnel Transistors
• Electrochemical Characterization of Pentacene Thin Films in Vacuum with an Ionic Liquid as Electrolyte
• Study on Zn Diffusion in GaAs and Al_xGa_As (x≤0.4) at Temperatures from 726° to 566℃
• Diffusion of Cd and Zn into InP and InGaAsP (E_g=0.95-1.35 eV)
• Deposition of Amorphous Zinc Indium Tin Oxide and Indium Tin Oxide Films on Flexible Poly(ether sulfone) Substrate Using RF Magnetron Co-sputtering System
• Direct Observation of Interlayer Josephson Vortices in Heavily Pb-Doped Bi2Sr2CaCu2Oy by Scanning Superconducting Quantum Interference Device Microscopy
• Inorganic Impurity Effect on the Photoinduced Hydrophilic Conversion on Ultrasmooth SrTiO3 and TiO2 Single Crystal Surfaces
• In situ Auger Electron Spectroscopy Study of the Pentacene Film Grown on the SrTiO3(001) Surface
• Photochemical Approach to Analysis of Ferroelectric Transition in BaxSr1-xTiO3 Epitaxial Films

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