Study on Zn Diffusion in GaAs and Al_xGa_<1-x>As (x≤0.4) at Temperatures from 726° to 566℃

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Zn diffusion in GaAs and Al_xGa_<1-x>As (x≤0.4) was investigated at temperatures from 566° to 726°, with 5/50/45 (Ga/As/Zn) and ZnAs_2 sources. The time and temperature dependence of the diffusion depth in GaAs was obtained as d(μm)=4.55×10^6√<t(h)>exp(-1.20eV/kT(K)) for a wide temperature range (566°-950°). The activation energy E_c obtained from the temperature dependence of Zn concentration in the diffused layer was found to be 0.68 eV which agreed with calculations based on thermochemical analysis taking Ga self-diffusion into consideration. It was observed that X_j=d/√<t> in Al_xGa_<1-x>As monotonically increased with increasing x and that the activation energy of X_j for Al_<0.3>Ga_<0.7>As was 1.03 eV which was smaller than that of 1.20 eV in GaAs. The present results for Al_xGa_<1-x>As are explained by considering the increase in the lattice binding energy with Al content x, based on an I-S diffusion model of Zn.
社団法人応用物理学会の論文
1983-05-20