Si Nano-Photodiode with a Surface Plasmon Antenna

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2005-04-10

著者

• FUJIKATA Junichi

  MIRAI-Selete

• OHASHI Keishi

  MIRAI-Selete

• BABA Toshio

  Fundamental Research Laboratories, NEC Corporation

• OHASHI Keishi

  Fundamental Research Laboratories, NEC Corporation

• ISHI Tsutomu

  Fundamental and Environmental Research Laboratories, NEC Corporation

• MAKITA Kikuo

  System Devices Research Laboratories, NEC Corporation

• FUJIKATA Junichi

  Fundamental and Environmental Research Laboratories, NEC Corporation

• Baba Toshio

  Fundamental And Environmental Research Laboratories Nec Corporation

• Makita Kikuo

  System Devices Research Laboratories Nec Corporation

• Ishi Tsutomu

  Nano Electronics Res. Labs. Nec Corp.

• Ohashi Keishi

  Fundamental And Environmental Research Laboratories Nec Corporation

関連論文

• Waveguide-Integrated Si Nano-Photodiode with Surface-Plasmon Antenna and its Application to On-chip Optical Clock Distribution
• A Study on the Design and Properties of an SiON/SiO_2 Waveguide : The Effect of the Substrate on Propagation Loss
• Gigahertz-rate optical modulation on Mach-Zehnder PLZT electro-optic modulators formed on silicon substrates by aerosol deposition
• LSI on-chip optical interconnection with Si nano-photonics
• Characterization of Depletion-Type Surface Tunnel Transistors
• LSI On-Chip Optical Interconnection with Si Nano-Photonics
• Electro-Optical Properties of (Pb, La)(Zr, Ti)O_3 Films Prepared by Aerosol Deposition Method
• Si Nano-photonics for LSI on-chip optical interconnection
• Surface Tunnel Transistors with Multiple Interband Tunnel Junctions (Special Issue on New Concept Device and Novel Architecture LSIs)
• First Observation of Negative Differential Resistance in Surface Tunnel Transistors
• Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
• Improved Negative Differential Resistance Characteristics in Surface Tunnel Transistors
• Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
• A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
• Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
• Application of Surface-Plasmon Antenna to Near-Infrared Photodetectors for Optical Communication
• Aerosol Deposition on Transparent Electro-Optic Films for Optical Modulators(Micro/Nano Fabrication,Microoptomechatronics)
• Highly Enhanced Speed and Efficiency of Si Nano-Photodiode with a Surface-Plasmon Antenna
• Si Nano-Photodiode with a Surface Plasmon Antenna
• Large Optical Transmission through a Single Subwavelength Hole Associated with a Sharp-Apex Grating
• Dielectric Characteristics of Ferroelectric Films Prepared by Aerosol Deposition in THz Range (Special Issue: Ferroelectric Materials and Their Applications)
• Electro-Optic Properties of Pb(Zr1-xTix)O3 (X=0,0.3,0.6) Films Prepared by Aerosol Deposition
• Electro-Optical Properties and Structures of (Pb, La)(Zr, Ti)O_3 and PbTiO_3 Films Prepared Using Aerosol Deposition Method
• ORS-09 DESIGN AND FABRICATION OF PLASMON-ENHANCED OPTICAL HEADS
• Surface Tunnel Transistor: Gate-Controlled Lateral Interband Tunneling Device
• High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
• Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
• The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
• Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
• Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
• Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
• Terahertz Near-Field Imaging Using Enhanced Transmission through a Single Subwavelength Aperture
• Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
• Monte Carlo Simulation of Resonant Tunneling Diode
• Multiple-Valued Memory Operation Using a Single-Electron Device : a Proposal and an Experimental Demonstration of a Ten-Valued Operation
• Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
• Hot Electron Transport in Si-MOSFETs
• Transport Properties in Sub-10-nm-gate EJ-MOSFETs
• Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
• Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
• Electro-Optical Properties and Structures of (Pb, La)(Zr, Ti)O3 and PbTiO3 Films Prepared Using Aerosol Deposition Method
• Direct Tunneling from Source to Drain in Nanometer-Scale Silicon Transistors
• 4.2 K Operation of InAlAs/InGaAs Heterojunction Bipolar Transistor
• Strong Influence of Surface Structures on Enhanced Transmission through Subwavelength Hole Arrays
• Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy
• Proposal for Surface Tunnel Transistors
• Low-loss Silicon Oxynitride Waveguides and Branches for the 850-nm-Wavelength Region
• Lanthanum-Modified Lead Zirconate Titanate Electro-Optic Modulators Fabricated Using Aerosol Deposition for LSI Interconnects
• InGaAs Nano-Photodiode Enhanced Using Polarization-Insensitive Surface-Plasmon Antennas
• Electro-Optic Properties of Pb(Zr1-xTix)O3 ($X=0$, 0.3, 0.6) Films Prepared by Aerosol Deposition
• Electro-Optical Properties of (Pb, La)(Zr, Ti)O3 Films Prepared by Aerosol Deposition Method
• Terahertz Near-Field Imaging Using Enhanced Transmission through a Single Subwavelength Aperture
• Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
• Dielectric Characteristics of Ferroelectric Films Prepared by Aerosol Deposition in THz Range
• Large Optical Transmission through a Single Subwavelength Hole Associated with a Sharp-Apex Grating

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