Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns
スポンサーリンク
概要
- 論文の詳細を見る
This paper experimentally demonstrates the strong enhancement of light extraction efficiency in two-dimensionally arranged microcolumns. They were designed like a honeycomb photonic crystal and fabricated into GaInAsP-InP wafers by using the inductively coupled plasma etching: For the laterally directed light passing through the microcolumns, peculiar transmission characteristics were observed, which could be explained by the Bragg reflection theory, namely, the photonic bandgap (PBG), The measurement of spontaneous lifetime showed that the internal efficiency in the microcolumns was reduced by the surface recombination at sidewalls. In contrast, the light extraction efficiency evaluated from the measured photoluminescence intensity, and the internal efficiency was more than ten times that for a planar wafer, This was thought to be due to the expanded escape cone of internal light by the low effective refractive index, and also due to the strong diffraction and scattering of laterally directed light, which corresponds to the second-order Bragg condition. Such effects are expected not only in photonic crystals but also in some disordered structures. We expect this structure to allow a high-efficiency light-emitting diode (LED), since electronic elements needed for current injection devices can be added independently of the effects.
著者
関連論文
- Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
- Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
- GaInAsP Microdisk Injection Laser with Benzocyclobutene Polymer Cladding and Its Athermal Effect
- GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
- Proposal of Optical Near-Field Probe Using Evanescent Field of Microdisk Laser
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
- Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
- H-Tree-Type Optical Clock Signal Distribution Circuit Using a Si Photonic Wire Waveguide : Optics and Quantum Electronics
- Low Loss Ultra-Small Branches in a Silicon Photonic Wire Waveguide(Special Issue on Recent Progress of Integrated Photonic Devices)
- High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
- DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
- Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
- High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
- Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns
- Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Observation of fast spontaneous emission decay in GaInAsP photonic crystal point defect nanocavity at room temperature
- Light localizations in photonic crystal line defect waveguides
- Ultralow threshold and single-mode lasing in microgear lasers and its fusion with quasi-periodic photonic crystals
- A Novel Short Cavity Laser with Deep Grating DBRs
- Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching
- Silicon nano-scale devices
- Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
- Hot Electron Transport in Si-MOSFETs
- Transport Properties in Sub-10-nm-gate EJ-MOSFETs
- Si In-Plane Floating-Dot Memory with a Single Electron Transistor
- Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
- Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
- Spatial Distributions of Individual Traps in a Si/SiO_2 Interface
- Spatial Distributions of Individual Traps in a Si/SiO_2 Interface