Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments
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概要
- 論文の詳細を見る
- 1991-09-15
著者
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Fujieda Shinji
Fundamental Research Laboratories Nec Corporation:microelectronics Research Laboratories Nec Corpora
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Matsumoto Yoshishige
Fundamental Research Laboratories Nec Corporation:microelectronics Research Laboratories Nec Corpora
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Matsumoto Yoshishige
Fundamental Research Laboratories Nec Corporation
-
Fujieda Shinji
Fundamental Research Laboratories Nec Corporation
関連論文
- Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments
- Thermal Stability of the AlN/a-Si/GaAs MIS Diodes with Different GaAs Surface Stoichiometry
- Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments
- Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface
- Interfacial Superstructure of AIN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces and Films
- DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
- Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
- Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
- Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
- Study on Zn Diffusion in GaAs and Al_xGa_As (x≤0.4) at Temperatures from 726° to 566℃
- Diffusion of Cd and Zn into InP and InGaAsP (E_g=0.95-1.35 eV)