Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-03-20
著者
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Matsumoto Y
Materials And Structures Laboratory Tokyo Institute Of Technology
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Mizuta Masashi
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Mizuta Masashi
Fundamental Research Laboratries Nec Corporation
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Mizuta Masashi
Fundamental Reseach Laboratories Nec Corporation
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Matsumoto Yoshinari
Department Of Electrical And Electronic Engineering Toyo University
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MATSUMOTO Yoshishige
Fundamental Research Laboratories, NEC Corporation
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Fujieda S
Nec Corp. Ibaraki Jpn
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Fujieda Shinji
Fundamental Research Laboratories Nec Corporation:microelectronics Research Laboratories Nec Corpora
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Fujieda Shinji
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Matsumoto Y
Nara Inst. Sci. And Technol. Ikoma‐shi Jpn
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Matsumoto Yoshishige
Fundamental Research Laboratories Nec Corporation
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Fujieda Shinji
Fundamental Research Laboratories Nec Corporation
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Matsumoto Yuji
Materials And Structures Laboratory Tokyo Institute Of Technology
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Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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- Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface
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