Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-12-20
著者
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Mizuta Masashi
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Mizuta Masashi
Fundamental Research Laboratries Nec Corporation
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Mizuta Masashi
Fundamental Reseach Laboratories Nec Corporation
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Matsumoto Yoshinari
Department Of Electrical And Electronic Engineering Toyo University
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MATSUMOTO Yoshishige
Fundamental Research Laboratories, NEC Corporation
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Fujieda S
Nec Corp. Ibaraki Jpn
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Fujieda Shinji
Fundamental Research Laboratories Nec Corporation:microelectronics Research Laboratories Nec Corpora
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Fujieda Shinji
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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KAWAMURA Tsutomu
Fundamental Research Laboratories, NEC Corporation
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Matsumoto Y
Nara Inst. Sci. And Technol. Ikoma‐shi Jpn
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Matsumoto Yoshishige
Fundamental Research Laboratories Nec Corporation
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Fujieda Shinji
Fundamental Research Laboratories Nec Corporation
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Kawamura Tsutomu
Fundamental Research Laboratories Nec Corporation
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Matsumoto Yuji
Materials And Structures Laboratory Tokyo Institute Of Technology
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Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
関連論文
- Interferometry of KrF-Laser-Produced Plasma by Shortened Stokes Pulse
- Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments
- Thermal Stability of the AlN/a-Si/GaAs MIS Diodes with Different GaAs Surface Stoichiometry
- Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments
- Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface
- Interfacial Superstructure of AIN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces and Films
- Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
- Epitaxial Stress Effect on Crystallographic Properties of Bi_4Ti_3O_ Heterostructures and Their Leakage Current Behaviors
- Memory Retention and Switching Speed of Ferroelectric Field Effect in (Pb, La)(Ti, Zr)O_3/La_2CuO_4:Sr Heterostructure
- A Preliminary Experimental Study on Dielectric Properties of Metal/(Pb, La)(Ti, Zr)O_3/Semiconductive Perovskite Heterostructures
- All-Perovskite Ferroelectric/Semiconductor Field Effect Transistor
- Crystallographic and Electrical Properties of Epitaxial BaTiO_3 Film Grown on Conductive and Insulating Perovskite Oxides ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Photochemical Identification of a Possible Adsorbed Pentacene Molecule on the SrTiO_3(001)
- Preparation of Atomically Smooth TiO_2 Single Crystal Surfaces and Their Photochemical Property
- Chemical trend of Fermi-level shift in transition metal-doped TiO2 films
- Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition
- Molecular layer-by-layer growth of C-60 thin films by continuous-wave infrared laser deposition
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
- Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
- Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
- Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
- Single Electron Device with Asymmetric Tunnel Barriers
- DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
- Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
- Microwave Dielectric Properties of Ba_Sm_Ti_O_ Solid Solutions with Sr Substituted for Ba
- Microwave Dielectric Properties of the Ba_(Sm_, R_y)_Ti_O_(R=Nd and La) Solid Solutions with Zero Temperature Coefficient of the Resonant Frequency
- Simple Ultraviolet Short-Pulse Intensity Diagnostic Method Using Atmosphere
- High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
- Transformation of Egg-White Glass into Partially Crystallized Glass Induced by Heat Treatment and Gamma-Ray Irradiation
- Fluctuation of the Electrical Conductivity Associated with the Glass Transition of xKNO_3・(100-x)Sr(NO_3)_2 Glasses
- A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
- A Localized Defect in InP with Strong Temperature Dependence of Capture Cross-Section
- Sequential Lattice Relaxation Model within the Double Configuration Coordinate for the DX Center in AlGaAs
- New Mechanism of Exciton Recombination in GaP : Exciton Bound to Neutral Donor and Neutral Acceptor Pair
- Recombination Processes in Anodized Porous-Si as Studied by Optically-Detected Magnetic Resonance
- Role of Minority-Carrier Diffusion in Photoreflectance Measurements of Epitaxial GaAs Wafers
- Low-Temperature ^Sn-Mossbauer Study of Superconducting Bi_4Sr_Ca_Cu_4Sn_O_ Ceramic (2212 Phase)
- ^Sn-Mossbauer Study on the Normal Lattice Vibration of Superconducting Bi(Pb)_2Sr_2Ca_2Cu_3Sn_O_
- Precipitation of Mayenite in 60CaO・35Al_2O_3・5Fe_2O_3 Glass Annealed at Several Temperatures Below and Above the Glass Transition Temperature
- Softening of Cu(1)-Site Vibration Matched with the Onset Temperature of Superconducting YBa_2(Cu_Sn_)_3O_
- Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
- DX Deep Centers in Al_xGa_As Grown by Liquid-Phase Epitaxy
- Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
- Formation of Tungsten Bronze-Type (Ba_Sm_)_αTi_Al_yO_ (α=1+y/36) Solid Solutions and Microwave Dielectric Properties
- Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
- Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
- Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition
- Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure
- ^Sn-Mossbauer Spectroscopic Study of High-T_c Superconducting YBa_2(Cu_Sn_)_3O_ and the Gamma-Ray Irradiation Effect
- Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
- Diffusion of Defects Introduced into CdS Crystals by Electron Beam Annealing
- Synthesis and Characterization of Thin Films of a Half-Metallic Oxide, Sr2FeMoO6, by Combinatorial Techniques
- Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities
- Enhancement of Quantum Ferroelectricity in SrTi18O3 Thin Film
- A Study of Deep Levels in MOCVD-Grown InP/Semi-Insulationg InP Structure
- A Capacitance Investigation of InGaAs/InP Isotype Heterojunction
- Deep Levels in InP Grown by MOCVD
- Organometallic Vapor Phase Epitaxial Growth of In_Ga_xAs_yP_ on GaAs
- Light-Induced Degradation of Semiconductor Surfaces as Studied by Photoacoustic Spectroscopy: Photodarkening Process of Zn_xCd_S: Ag, Al Phosphors
- Coherent Growth of ZnSe on GaAs by MOCVD
- Electrochemical Characterization of Pentacene Thin Films in Vacuum with an Ionic Liquid as Electrolyte
- Study on Zn Diffusion in GaAs and Al_xGa_As (x≤0.4) at Temperatures from 726° to 566℃
- Diffusion of Cd and Zn into InP and InGaAsP (E_g=0.95-1.35 eV)
- Deposition of Amorphous Zinc Indium Tin Oxide and Indium Tin Oxide Films on Flexible Poly(ether sulfone) Substrate Using RF Magnetron Co-sputtering System
- Near-Junction Concentration of Oxygen Donor and Its Correlation with Efficiency for GaP Red-Emitting Diodes
- Optical Cross Sections for the Zn-O Center in GaP
- Direct Observation of Interlayer Josephson Vortices in Heavily Pb-Doped Bi2Sr2CaCu2Oy by Scanning Superconducting Quantum Interference Device Microscopy
- Inorganic Impurity Effect on the Photoinduced Hydrophilic Conversion on Ultrasmooth SrTiO3 and TiO2 Single Crystal Surfaces
- In situ Auger Electron Spectroscopy Study of the Pentacene Film Grown on the SrTiO3(001) Surface
- Photochemical Approach to Analysis of Ferroelectric Transition in BaxSr1-xTiO3 Epitaxial Films
- A New Photoacoustic Method to Characterize Wider-Gap Epitaxial Layers on Narrower-Gap Substrates