Diffusion of Cd and Zn into InP and InGaAsP (E_g=0.95-1.35 eV)
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概要
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The diffusion of Cd and Zn into InP was investigated at temperatures ranging from 566℃ to 715℃. Cd diffusion using a combination source composed of Cd_3P_2 and InP powder allows us to establish a shallow diffusion depth (X_j) of less than a few microns and to form a highly planar p-n junction without surface deterioration. On the other hand, Zn diffusion using a combination source consisting of Zn_3P_2 (or ZnP_2)+InP powder proceeded rapidly and resulted in irregular diffusion fronts. When selective diffusion of Cd into InP was carried out using a PSG film mask, slip dislocations were found to be generated along the mask edge if the amount of InP powder in the diffusion ampoule was not sufficient (≤100 mg). Cd diffusion into InGaAsP (E_g=0.95-1.35 eV) lattice matched to InP was also carried out, and it was found that the diffusion depth decreases monotonically with decreasing band gap energy.
- 社団法人応用物理学会の論文
- 1983-11-20
著者
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MATSUMOTO Yoshishige
Fundamental Research Laboratories, NEC Corporation
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Matsumoto Yoshishige
Fundamental Research Laboratories Nec Corporation
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- Study on Zn Diffusion in GaAs and Al_xGa_As (x≤0.4) at Temperatures from 726° to 566℃
- Diffusion of Cd and Zn into InP and InGaAsP (E_g=0.95-1.35 eV)