A New Photoacoustic Method to Characterize Wider-Gap Epitaxial Layers on Narrower-Gap Substrates
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概要
- 論文の詳細を見る
A new photoacoustic method is demonstrated to determine the principal band gap energy together with higherlying band edges of thin epitaxial layers of Ga_<1-x>Al_xAs. The output signal intensity is proportional to an optical absorption coefficient at least to the extent of 10^4cm^<-1>; correspondingly, a thickness less than 1μm of epitaxial layers is detected without any processing of as-grown samples.
- 社団法人応用物理学会の論文
- 1983-02-20
著者
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Ohba Yasuo
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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MIZUTA Masashi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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OHBA Yasuo
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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