Metalorganic Vapor Phase Epitaxy of CuGa(S_xSe_<1-x>)_2 Lattice-Matched to GaP(100)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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Yoshino Junji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
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Hara Kazuhiko
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Yoshino J
Department Of Physics Tokyo Institute Of Technology
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KUKIMOTO Hiroshi
Imaging Science and Engineering Laboratory,Tokyo Institute of Technology
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Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
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Shinozawa Taro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Shinozawa Taro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
関連論文
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- Raman Spectra in Al_xGa_As under High Pressure
- Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
- Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga_2O_3 as a Novel Mask Layer
- Dimethylamine as a Carbon Remover in Atomic Layer Epitaxy of AlAs
- Epitaxial Growth of CuGaS_2 by Metalorganic Chemical Vapor Deposition
- Deposition of Ga, Al and As Layers by Laser-Assisted Decomposition of Trimethylgallium, Trimethylaluminum and Arsine
- Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth
- Preparation of Pb-Doped Bi-Sr-Ca-Cu-O Superconducting Thin Films Grown by Chemical Vapor Deposition
- Superconducting Bi-Sr-Ca-Cu-O Thin Films Grown by Metalorganic Chemical Vapor Deposition at Different Temperatures
- Radiative and Non-Radiative Recombination Processes of Photo-Generated Carriers in ^a-Si_xC_:H (x〜0.2)
- GaAs P-N Junction and Doping Superlattices Grown by Laser-Assisted MOVPE
- Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE
- The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPE
- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
- A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
- High-Rate Particle Growth Using GaCl and NH_3 as Sources in Two-Stage Vapor-Phase Method for Synthesis of GaN Powders : Semiconductors
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- Picosecond Dynamics of Electron-Hole Plasma in GaAs/AlAs Multiple Quantum Well Structure
- Preparation and Characterization of Fe-Based III-V Diluted Magnetic Semiconductor(Ga, Fe)As
- Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
- Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
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- Blue-Emitting ac-Electroluminescent Cells Based on ZnS:Tm, Li Powder Phosphors
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- Near-Junction Concentration of Oxygen Donor and Its Correlation with Efficiency for GaP Red-Emitting Diodes
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