Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_<1-x>As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-02-20

著者

• Tanaka M

  Production Engineering Research Laboratory Hitachi Ltd.

• Yoshino Junji

  Institute Of Industrial Science University Of Tokyo

• SAKAKI Hiroyuki

  Institute of Industrial Science,University of Tokyo

• Yoshino J

  Department Of Physics Tokyo Institute Of Technology

• Tanaka M

  Toshiba Corp. Kawasaki Jpn

• Tanaka M

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Sakaki H

  Univ. Tokyo Tokyo Jpn

• Sakaki Hiroyuki

  Institute Of Industrial Science University Of Tokyo

• TANAKA Masaaki

  Institute of Industrial Science, University of Tokyo

• Sakaki Hiroyuki

  Institute Of Industrial Science The University Of Tokyo

• Tanaka Masaaki

  Institute Of Industrial Science University Of Tokyo

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