Magnetophonon Resonance in a Two-Dimensional Electron System in the GaAs-Al_xAs Heterojunction Interface
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概要
- 論文の詳細を見る
Magnetophonon resonance in a two-dimensional electron system at the in-terface of GaAs-A[.Ga. ,As heterojunction was investigated using pulsed highmagnetic fields up to 35 T. The fundamental peaks with a harmonic number V= lwas observed for the first time. The polaron mass of 0.0745-50.0015 m. wasdetermined by the analysis of the oscillatory resistance change using the LOphonon energy of GaAs. This value was successfully interpreted in terms of thenon-parabolicity of the conduction band in GaAs taking into account the twodimensionality of the electronic state. A remarkably large damping of the oscilla-tion was observed in spite of the large electron mobility.
- 社団法人日本物理学会の論文
- 1982-07-15
著者
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Kido Giyuu
Institute for Materials Research, Tohoku University
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MIURA Noboru
Institute for Solid State Physics,University of Tokyo
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Kido Giyuu
Institute For Materials Research Tohoku University
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Kido Giyuu
Institute For Solid State Physics University Of Tokyo
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Miura Noboru
Instilute For Solid State Physics University Of Tokyo
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SAKAKI Hiroyuki
Institute of Industrial Science,University of Tokyo
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OHNO Hideo
Institute of Industrial Science,University of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Ohno Hideo
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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