Observation of an Interface Exciton and Exciton Localization in BiI_3-CdI_2 Multilayer Structures

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概要

• 論文の詳細を見る

• We have succeeded in growing BiI_3-CdI_2 multilayer structures by the hot wall technique. Optical absorption spectra were measured around the band-edge exciton energy of BiI_3. The absorption peak due to the exciton transition exhibited a splitting and energy shifts in multilayer samples depending on the BiI_3 film thickness. The higher-energy component was assigned to an exciton transition at interface layers. We also observed exciton transitions in ultra-thin films with thicknesses of a few unit-layers. These phenomena were analyzed by a model considering both exciton localization and a site shift effect.

• 社団法人日本物理学会の論文
• 1994-11-15

著者

• MIURA Noboru

  Institute for Solid State Physics,University of Tokyo

• KOMATSU Teruo

  Department of Physics, Osaka City University

• Miura Noboru

  Instilute For Solid State Physics University Of Tokyo

• Komatsu Tokutaro

  Graduate School Of Arts & Sciences The University Of Tokyo

• Komatsu Tokutaro

  Department Of Chemistry Graduate School Of Science Kyoto University

• Komatsu T

  Osaka Univ. Osaka

• Komatsu Teruo

  Department Of Physics Faculty Of Science Osaka City University

• Watanabe Katsuyoshi

  Department of Physics, Faculty of Liberal Arts and Education Yamanashi University

• Watanabe Katsuyoshi

  Department Of Physics Faculty Of Liberal Arts And Education Yamanashi University

• MIURA Noboru

  Institute for Solid State Physics, University of Tokyo

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